Semiconductor device and method of manufacturing the same

• US 8,847,316 B2
• Filed: 05/20/2013
• Issued: 09/30/2014
• Est. Priority Date: 03/02/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Murakami, Satoshi, Yamazaki, Shunpei, Koyama, Jun, Osame, Mitsuaki, Tanaka, Yukio, Hirakata, Yoshiharu
• Primary Examiner(s): Lee, Eugene
• Application Number:
  US13/898,077
• Publication Number:
  US 20130341626A1
• Time in Patent Office: 498 Days
• Field of Search: 257/347, 257/59, 257/72, 257/E29.151
• US Class Current: 257/347
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 31/02164 for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Abstract

An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15V/min, there is no wrap around on the electrode, and film peeling can be prevented.

Claims

1. A semiconductor device comprising:

a semiconductor film comprising crystalline silicon;

a gate insulating film over the semiconductor film; and

a gate electrode over the semiconductor film with the gate insulating film interposed therebetween;

a first insulating film over the gate electrode, the first insulating film comprising silicon, nitrogen and hydrogen;

a first conductive layer over the first insulating film, the first conductive layer being electrically connected to one of a source region and a drain region of the semiconductor film;

a second insulating film comprising a resin over the first conductive layer;

a second conductive layer over the second insulating film, the second conductive layer having a light blocking ability;

a third insulating film over the second conductive layer, the third insulating film comprising silicon and nitrogen; and

a pixel electrode over the third insulating film,

wherein the pixel electrode is electrically connected to the one of the source region and the drain region through at least the first conductive layer.

2. The semiconductor device according to claim 1, wherein the pixel electrode is overlapped with the second conductive layer with the third insulating film therebetween.

3. The semiconductor device according to claim 1, wherein the third insulating film comprises silicon nitride.

4. The semiconductor device according to claim 1, wherein the second conductive layer comprises aluminum.

5. The semiconductor device according to claim 1, wherein the second insulating film comprises a material selected from the group consisting of polyimide, acrylic, polyamide, polyimide amide and benzocyclobutane.

6. A liquid crystal display device comprising the semiconductor device according to claim 1.

7. The semiconductor device according to claim 1, wherein the second insulating film is a color filter.

23. The semiconductor device according to claim 1, wherein a concentration of hydrogen contained in the first insulating film is between 1 and 30 atomic %.

8. A semiconductor device comprising:

a semiconductor film comprising crystalline silicon;

a gate insulating film over the semiconductor film; and

a gate electrode over the semiconductor film with the gate insulating film interposed therebetween;

a first insulating film over the gate electrode, the first insulating film comprising silicon, nitrogen and hydrogen;

a first conductive layer over the first insulating film, the first conductive layer being electrically connected to one of a source region and a drain region of the semiconductor film;

a second insulating film comprising a resin over the first conductive layer;

a second conductive layer over the second insulating film;

a third insulating film over the second conductive layer, the third insulating film comprising silicon and nitrogen; and

a pixel electrode over the third insulating film, the pixel electrode being overlapped with the second conductive layer with the third insulating film therebetween,

wherein the pixel electrode is electrically connected to the one of the source region and the drain region through at least the first conductive layer.

9. The semiconductor device according to claim 8, wherein the third insulating film comprises silicon nitride.

10. The semiconductor device according to claim 8, wherein the third insulating film comprises silicon nitride oxide.

11. The semiconductor device according to claim 8, wherein the second conductive layer comprises aluminum.

12. The semiconductor device according to claim 8, wherein the second insulating film comprises a material selected from the group consisting of polyimide, acrylic, polyamide, polyimide amide and benzocyclobutane.

13. A liquid crystal display device comprising the semiconductor device according to claim 8.

14. The semiconductor device according to claim 8, wherein the second insulating film is a color filter.

24. The semiconductor device according to claim 8, wherein a concentration of hydrogen contained in the first insulating film is between 1 and 30 atomic %.

15. A semiconductor device comprising:

a semiconductor film comprising crystalline silicon;

a gate insulating film over the semiconductor film; and

a gate electrode over the semiconductor film with the gate insulating film interposed therebetween;

a first insulating film over the gate electrode, the first insulating film comprising silicon, nitrogen and hydrogen;

a first conductive layer over the first insulating film, the first conductive layer being electrically connected to one of a source region and a drain region of the semiconductor film;

a second insulating film comprising a resin over the first conductive layer;

a second conductive layer over the second insulating film, the second conductive layer being electrically connected to a common electric potential;

a third insulating film over the second conductive layer, the third insulating film comprising silicon and nitrogen; and

a pixel electrode over the third insulating film,

wherein the pixel electrode is electrically connected to the one of the source region and the drain region through at least the first conductive layer.

16. The semiconductor device according to claim 15, wherein the pixel electrode is overlapped with the second conductive layer with the third insulating film therebetween.

17. The semiconductor device according to claim 15, wherein the third insulating film comprises silicon nitride.

18. The semiconductor device according to claim 15, wherein the second conductive layer comprises aluminum.

19. The semiconductor device according to claim 15, wherein the second insulating film comprises a material selected from the group consisting of polyimide, acrylic, polyamide, polyimide amide and benzocyclobutane.

20. A liquid crystal display device comprising the semiconductor device according to claim 15.

21. The semiconductor device according to claim 15, wherein the second insulating film is a color filter.

22. The semiconductor device according to claim 15, wherein the second conductive layer has a light shielding ability.

25. The semiconductor device according to claim 15, wherein a concentration of hydrogen contained in the first insulating film is between 1 and 30 atomic %.