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Semiconductor device

  • US 8,847,326 B2
  • Filed: 06/10/2013
  • Issued: 09/30/2014
  • Est. Priority Date: 07/16/2010
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a first transistor;

    an insulating layer over one of a source region and a drain region of the first transistor; and

    a second transistor including;

    a channel formation region over the insulating layer;

    a gate insulating layer over the channel formation region; and

    a gate electrode over the gate insulating layer,wherein a top surface of a gate electrode of the first transistor is in contact with a bottom surface of one of a source electrode and a drain electrode of the second transistor,wherein the gate insulating layer of the second transistor and the insulating layer satisfy a formula;

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