Memory device and method for driving memory device
First Claim
1. A semiconductor device comprising:
- a transistor comprising a gate, a first terminal, and a second terminal;
a power supply for supplying a power supply potential;
a bootstrap circuit for inputting the power supply potential to the gate, the bootstrap circuit comprising a delay circuit and a capacitor;
a first line for inputting a first signal to control the bootstrap circuit; and
a second line for inputting a second signal to the first terminal,wherein the first signal has a potential equal to the power supply potential,wherein the delay circuit is configured to delay the first signal and input the delayed first signal to the capacitor, andwherein the second signal has a potential equal to the power supply potential or a grounded potential.
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Accused Products
Abstract
A memory device capable of being operated with a single potential uses capacitive coupling of a capacitor connected to a gate of a transistor for data writing. That is, the capacitive coupling is induced by inputting a signal, which is supplied by a delay circuit configured to delay a write signal having a potential equal to the power supply potential, to the capacitor. Increase in the potential of the gate by the capacitive coupling allows the transistor to be turned on in association with the power supply potential applied to the gate from a power supply. Data is written by inputting a signal having a potential equal to the power supply potential or a grounded potential to a node through the transistor.
127 Citations
31 Claims
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1. A semiconductor device comprising:
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a transistor comprising a gate, a first terminal, and a second terminal; a power supply for supplying a power supply potential; a bootstrap circuit for inputting the power supply potential to the gate, the bootstrap circuit comprising a delay circuit and a capacitor; a first line for inputting a first signal to control the bootstrap circuit; and a second line for inputting a second signal to the first terminal, wherein the first signal has a potential equal to the power supply potential, wherein the delay circuit is configured to delay the first signal and input the delayed first signal to the capacitor, and wherein the second signal has a potential equal to the power supply potential or a grounded potential. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a power supply for supplying a power supply potential; a controller electrically connected to the power supply; a transistor comprising a gate, a first terminal, and a second terminal, the gate being electrically connected to the controller; a first line electrically connected to the controller; a delay circuit electrically connected to the first line; a first capacitor electrically connected between the delay circuit and the gate; and a second line electrically connected to the first terminal. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a power supply for supplying a power supply potential; a first transistor comprising a gate, a first terminal, and a second terminal; a controller comprising; a diode electrically connected between the power supply and the gate of the first transistor; and a second transistor comprising a gate, a first terminal, and a second terminal, the second terminal of the second transistor being electrically connected to the power supply through the diode; a first capacitor electrically connected to the gate of the first transistor; a first line electrically connected to the gate of the second transistor; a first delay circuit electrically connected between the first line and the first capacitor; and a second line electrically connected to the first terminal of the first transistor. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification