Method and apparatus for adjusting maximum verify time in nonvolatile memory device
First Claim
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1. A method of operating a nonvolatile memory device, comprising:
- decoding a received address and determining whether the received address is a first type of page address or a second type of page address;
adjusting a number of program verify operations per program loop used to verify a program state of page data according to the determined type of page address; and
performing a verify operation using the adjusted number of program verify operations per program loop.
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Abstract
A nonvolatile memory device is programmed by decoding a received address, determining whether the received address is a first type of page address or a second type of page address, adjusting a maximum verify time of a program loop used to verify a program state of page data according to the determined type of page address, and performing a verify operation during the adjusted maximum verify time.
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Citations
19 Claims
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1. A method of operating a nonvolatile memory device, comprising:
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decoding a received address and determining whether the received address is a first type of page address or a second type of page address; adjusting a number of program verify operations per program loop used to verify a program state of page data according to the determined type of page address; and performing a verify operation using the adjusted number of program verify operations per program loop. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A nonvolatile memory device, comprising:
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a memory cell array comprising a plurality of nonvolatile memory cells connected to a plurality of word lines; control logic configured to decode a received address, determine whether the received address is a first type of page address or a second type of page address, adjust a number of program verify operations used to verify a program state of selected memory cells in each program loop of a program operation according to the determined type of page address, and output a control code corresponding to the adjustment; and a voltage supply circuit configured to supply a verify voltage to a selected word line connected to the selected memory cells according to the control code. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method of programming a nonvolatile memory device, comprising:
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selecting a page of memory cells; and performing a program operation on the selected page of memory cells, wherein the program operation comprises a plurality of program loops each comprising a program-execution operation and at least one program-verify operation, and wherein a number of program verify operations per program loop is determined by whether the selected page is a first type of page or a second type of page, wherein the first type of page is a least significant bit (LSB) page or a central significant bit (CSB) page and the second type of page is a most significant bit (MSB) page. - View Dependent Claims (17, 18, 19)
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Specification