Nonvolatile memory device, erasing method thereof, and memory system including the same

• US 8,848,456 B2
• Filed: 08/15/2013
• Issued: 09/30/2014
• Est. Priority Date: 03/04/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Han, Jinman, Kim, Doogon
• Primary Examiner(s): Nguyen, Viet Q
• Application Number:
  US13/967,455
• Publication Number:
  US 20130329500A1
• Time in Patent Office: 411 Days
• Field of Search: 365/185.29, 365/185.27, 365/185.23, 365/185.18, 365/185.24, 365/218
• US Class Current: 365/185.29
• CPC Class Codes: G11C 16/04 using variable threshold transistors, e.g. FAMOS
• CPC Class Codes: G11C 16/08 Address circuits; Decoders; Word-line control circuits
• CPC Class Codes: G11C 16/14 Circuits for erasing electrically, e.g. erase voltage switching circuits
• CPC Class Codes: G11C 16/16 for erasing blocks, e.g. arrays, words, groups
• CPC Class Codes: H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels
• CPC Class Codes: H10B 43/35 with cell select transistors, e.g. NAND

Abstract

Provided is an erasing method of a nonvolatile memory device. The erasing method applies a word line erase voltage to a plurality of word lines connected to the memory cells respectively, applies a specific voltage to a ground selection line connected to the ground selection transistor, applies an erase voltage to a substrate in which the memory string formed during the step applying the specific voltage to the ground selection line, and floats the ground selection line in response to a voltage change of the substrate.

Claims

1. A method of erasing a nonvolatile memory device including a memory string, the memory string including a plurality of memory cells, a string selection transistor, and a ground selection transistor disposed on a substrate, the method comprising:

applying one or more word line erase voltages to a plurality of word lines connected to the memory cells;

applying a first voltage to a ground selection line connected to the ground selection transistor;

applying a second voltage from a first time to the substrate on which the memory string is disposed while applying the first voltage to the ground selection line; and

floating the ground selection line from a second time, the second time being later than the first time.

2. The method of claim 1, wherein the first voltage is substantially identical to a ground voltage.

3. The method of claim 1, wherein the floating of the ground selection line is performed before a voltage of the substrate increases to a substantially same level of the second voltage.

4. The method of claim 1, wherein the plurality of memory cells are stacked on each other between the ground selection transistor and a string selection transistor in a direction vertical to the substrate.

5. The method of claim 1, wherein the one or more word line erase voltages are substantially identical to a ground voltage.

17. The method of claim 1, further comprising:

floating a string selection line connected to the string selection transistor from the first time.

18. The method of claim 1, wherein the plurality of memory cells are erased by applying the second voltage to the substrate from the first time until a voltage of the substrate increases to a substantially same level of the second voltage.

6. A nonvolatile memory device comprising:

a memory cell array comprising a plurality of memory strings, each memory string including at least one ground selection transistor formed on a first surface of a substrate, a plurality of memory cells formed on the at least one ground selection transistor, and at least one string selection transistor formed on the plurality of memory cells;

an address decoder congifured to control a plurality of word lines connected to the plurality of memory cells respectively, at least one string selection line connected to the at least one string selection transistor and at least one ground selection line connected to the at least one ground selection transistor; and

a substrate bias circuit configured to apply an erase voltage to the substrate from a first time,

wherein the address decoder is configured to apply a first voltage to the at least one ground selection line from the first time and float the at least one ground selection line at a second time, the second time being later than the first time.

7. The nonvolatile memory device of claim 6, wherein the first voltage is substantially identical to a ground voltage.

8. The nonvolatile memory device of claim 6, wherein the address decoder is configured to float the at least one ground selection line before a voltage of the substrate increases to a substantially same level of the erase voltage.

9. The nonvolatile memory device of claim 6, wherein the address decoder is configured to apply one or more word line erase voltages to the plurality of word lines, the one or more word line erase voltages being substantially identical to a ground voltage.

10. The nonvolatile memory device of claim 6, wherein a plurality of bit lines are connected to the plurality of memory strings respectively.

11. The nonvolatile memory device of claim 10, wherein the at least one string selection line is connected to string selection transistors of the plurality of memory strings in common.

12. The nonvolatile memory device of claim 11, further comprising:

a plurality of second memory strings connected to the plurality of bit lines respectively, each second memory string including at least one second ground selection transistor disposed on the substrate, a plurality of second memory cells disposed on the at least one second ground selection transistor and at least one second string selection transistor disposed on the plurality of second memory cells.

13. The nonvolatile memory device of claim 12, wherein the address decoder is connected to second string select transistors of the plurality of second memory strings through at least one second string selection line.

14. The nonvolatile memory device of claim 12, wherein the at least one ground selection line is connected to ground selection transistors of the plurality of memory strings and second ground selection transistors of the plurality of second memory strings in common.

15. The nonvolatile memory device of claim 12, wherein memory cells having a same height in the plurality of memory strings and the plurality of second memory strings are connected to a same word line from among the plurality of word lines.

20. The nonvolatile memory device of claim 15, wherein the address decoder is configured to apply a dummy word line erase voltage to the at least one dummy word line.

16. The nonvolatile memory device of clam 6, further comprising:

a reading and writing circuit connected to the plurality of memory strings through a plurality of bit lines, and configured to drive the bit lines.

19. A nonvolatile memory device comprising:

a memory cell array comprising a plurality of memory strings, each memory string including at least one ground selection transistor on a first surface of a substrate, a plurality of memory cells on or above the at least one ground selection transistor, at least one string selection transistor on or above the plurality of memory cells, and at least one dummy cell either on the at least one ground selection transistor and beneath the at least one string selection transistor, or on the at least one ground selection transistor or beneath the at least one string selection transistor;

an address decoder configured to control a plurality of word lines connected to the plurality of memory cells, at least one string selection line connected to the at least one string selection transistor, at least one dummy word line connected to the at least one dummy cell and at least one ground selection line connected to the at least one ground selection transistor; and

a substrate bias circuit configured to apply an erase voltage to the substrate from a first time,

wherein the address decoder is configured to apply a first voltage to the at least one ground selection line from the first time and float the at least one ground selection line at a second time, the second time being later than the first time.