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Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer

  • US 8,852,760 B2
  • Filed: 04/17/2012
  • Issued: 10/07/2014
  • Est. Priority Date: 04/17/2012
  • Status: Active Grant
First Claim
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1. A multilayer stack with thermal stability to at least 400°

  • C. in a magnetic device, comprising;

    (a) a reference layer;

    (b) a free layer with perpendicular magnetic anisotropy (PMA) and having a top surface and a bottom surface;

    (c) a tunnel barrier layer formed between the reference layer and free layer; and

    (d) at least one dusting layer made of boron or a boron alloy having a B content greater than about 85 atomic % that contacts the bottom surface of the free layer in a bottom spin valve configuration, or the at least one dusting layer contacts the top surface of the free layer in a top spin valve configuration.

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