Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer

• US 8,852,760 B2
• Filed: 04/17/2012
• Issued: 10/07/2014
• Est. Priority Date: 04/17/2012
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Headway Technologies Incorporated (TDK Corporation)
• Inventors: Wang, Yu-Jen, Kula, Witold, Tong, Ru-Ying, Jan, Guenole
• Primary Examiner(s): BERNATZ, KEVIN M
• Application Number:
  US13/448,557
• Publication Number:
  US 20130270523A1
• Time in Patent Office: 903 Days
• Field of Search: None
• US Class Current: 428/811.1
• CPC Class Codes: G01R 33/091 Constructional adaptation of the sensor to specific applications
• CPC Class Codes: G11B 5/3906 Details related to the use of magnetic thin film layers or to their effects
• CPC Class Codes: H01F 10/123 having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H01F 10/3295 Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
• CPC Class Codes: H01F 41/307 insulating or semiconductive spacer
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials
• CPC Class Codes: Y10T 428/1114 having tunnel junction effect
• CPC Class Codes: Y10T 428/1143 with defined structural feature

Abstract

A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.

Claims

1. A multilayer stack with thermal stability to at least 400°

C. in a magnetic device, comprising;

(a) a reference layer;

(b) a free layer with perpendicular magnetic anisotropy (PMA) and having a top surface and a bottom surface;

(c) a tunnel barrier layer formed between the reference layer and free layer; and

(d) at least one dusting layer made of boron or a boron alloy having a B content greater than about 85 atomic % that contacts the bottom surface of the free layer in a bottom spin valve configuration, or the at least one dusting layer contacts the top surface of the free layer in a top spin valve configuration.

2. The multilayer stack of claim 1 wherein the free layer has a CoFe, Co, CoFeB, CoFeNiB, or CoFeB alloy composition and a thickness from about 5 to 20 Angstroms.

3. The multilayer stack of claim 1 wherein the free layer is further comprised of a non-magnetic layer (M) made of Ta, Al, Cu, Zr, Nb, Hf, Mg, or Mo and having a thickness of about 0.5 to 10 Angstroms to give a FL1/M/FL2 configuration wherein FL1 is a bottom portion of the free layer that contacts the at least one dusting layer.

4. The multilayer stack of claim 1 wherein the at least one dusting layer is B, CoB, or FeB and has a thickness from about 0.2 to 20 Angstroms.

5. The multilayer stack of claim 1 wherein the at least one dusting layers is a composite comprising a laminated structure of boron containing dusting layers.

6. The multilayer stack of claim 1 further comprised of a capping layer as an uppermost layer in the multilayer stack, the cap layer is a metal layer or a metal oxide layer.

7. The multilayer stack of claim 1 wherein the reference layer exhibits PMA, a magnetization direction thereof is parallel or anti-parallel to the PMA in the free layer to establish either a 1 or 0 memory state in the multilayer stack.

8. A magnetic tunnel junction (MTJ) with thermal stability to at least 400°

C., comprising;

(a) a seed layer formed on a substrate;

(b) a reference layer;

(c) a free layer with perpendicular magnetic anisotropy (PMA) and having a top surface and a bottom surface;

(d) a tunnel barrier layer formed between the reference layer and free layer; and

(e) a first dusting layer and a second dusting layer made of boron or a boron alloy having a B content greater than about 85 atomic % wherein the first dusting layer contacts the bottom surface of the free layer and the second dusting layer contacts the top surface of the free layer.

9. The MTJ of claim 8 wherein the MTJ is a bottom spin valve structure and further comprises a capping layer in which the seed layer, reference layer, tunnel barrier, first dusting layer, free layer, second dusting layer, and capping layer are sequentially formed on the substrate.

10. The MTJ of claim 9 wherein the capping layer comprises one or more of Ta, Ru, Cu, or Cr, or is MgTaOx, MgHfOx, MgNbOx, MgZrOx, MgO, SiOx, SrTiOx, BaTiOx, CaTiOx, LaAlQx, MnOx, VOx, Al₂O₃, TiOx, BOx, HfOx, or a lamination of one or more of the aforementioned oxides.

11. The MTJ of claim 8 wherein the free layer is further comprised of a non-magnetic layer (M) made of Ta, Al, Cu, Zr, Hf, Nb, Mg, or Mo and has a thickness of about 0.5 to 10 Angstroms to give a FL1/M/FL2 configuration wherein FL1 is a bottom portion of the free layer that contacts the first dusting layer and FL2 is an upper portion of the free layer that contacts the second dusting layer.

12. The MTJ of claim 11 wherein each of the FL1 and FL2 layers has a thickness between about 5 and 14 Angstroms.

13. The MTJ of claim 8 wherein the free layer has a CoFe, Co, CoFeB, CoFeNiB, or CoFeB alloy composition and a thickness from about 5 to 20 Angstroms.

14. The MTJ of claim 8 wherein the first and second dusting layers are B, CoB, or FeB and each have a thickness from about 0.2 to 20 Angstroms.

15. The MTJ of claim 8 wherein the MTJ is a top spin valve structure and further comprises a capping layer in which the seed layer, first dusting layer, free layer, second dusting layer, tunnel barrier layer, reference layer, and capping layer are sequentially formed on the substrate.

16. The MTJ of claim 8 wherein the reference layer exhibits PMA, a magnetization direction thereof is parallel or anti-parallel to the PMA in the free layer to establish either a 1 or 0 memory state in the MTJ.

17. The multilayer stack of claim 8 wherein one or both of the first dusting layer and the second dusting layer is a composite comprising a laminated structure of boron containing dusting layers.