FinFET/tri-gate channel doping for multiple threshold voltage tuning
First Claim
1. A method of controlling threshold voltages in a fin field effect transistor (FinFET), comprising:
- forming a dummy gate over a central portion of a fin, the central portion of the fin disposed between exterior portions of the fin unprotected by the dummy gate;
removing the exterior portions of the fin and replacing the exterior portions of the fin with an epitaxially-grown silicon-containing material;
applying a spin-on resist over the dummy gate and the epitaxially-grown silicon-containing material and then removing the spin-on resist over a hard mask of the dummy gate;
etching away the hard mask and a polysilicon of the dummy gate to expose a gate oxide of the dummy gate, the gate oxide disposed over the central portion of the fin; and
implanting ions into the central portion of the fin through the gate oxide disposed over the central portion of the fin.
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Accused Products
Abstract
An embodiment method of controlling threshold voltages in a fin field effect transistor (FinFET) includes forming a dummy gate over a central portion of a fin, the central portion of the fin disposed between exterior portions of the fin unprotected by the dummy gate, removing the exterior portions of the fin and replacing the exterior portions of the fin with an epitaxially-grown silicon-containing material, applying a spin-on resist over the dummy gate and the epitaxially-grown silicon-containing material and then removing the spin-on resist over the hard mask of the dummy gate, etching away the hard mask and a polysilicon of the dummy gate to expose a gate oxide of the dummy gate, the gate oxide disposed over the central portion of the fin, and implanting ions into the central portion of the fin through the gate oxide disposed over the central portion of the fin.
371 Citations
20 Claims
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1. A method of controlling threshold voltages in a fin field effect transistor (FinFET), comprising:
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forming a dummy gate over a central portion of a fin, the central portion of the fin disposed between exterior portions of the fin unprotected by the dummy gate; removing the exterior portions of the fin and replacing the exterior portions of the fin with an epitaxially-grown silicon-containing material; applying a spin-on resist over the dummy gate and the epitaxially-grown silicon-containing material and then removing the spin-on resist over a hard mask of the dummy gate; etching away the hard mask and a polysilicon of the dummy gate to expose a gate oxide of the dummy gate, the gate oxide disposed over the central portion of the fin; and implanting ions into the central portion of the fin through the gate oxide disposed over the central portion of the fin. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of controlling threshold voltages in a fin field effect transistor (FinFET), comprising:
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forming a dummy gate over a central portion of a fin, the central portion of the fin disposed between exterior portions of the fin unprotected by the dummy gate; removing the exterior portions of the fin and replacing the exterior portions of the fin with an epitaxially-grown silicon-containing material; applying a spin-on resist over the dummy gate and the epitaxially-grown silicon-containing material and then removing the spin-on resist over a hard mask of the dummy gate; etching away the hard mask and a portion of a polysilicon of the dummy gate to expose a gate oxide of the dummy gate and to form polysilicon spacers, the gate oxide disposed over the central portion of the fin; and implanting ions into the central portion of the fin through the gate oxide disposed over the central portion of the fin. - View Dependent Claims (14, 15, 16)
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17. A method of controlling threshold voltages in a fin field effect transistor (FinFET), comprising:
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forming a dummy gate over a central portion of a fin; replacing exterior portions of the fin unprotected by the dummy gate with an epitaxially-grown silicon-containing material; applying a spin-on resist over the dummy gate and the epitaxially-grown silicon-containing material and then removing the spin-on resist over a hard mask of the dummy gate; etching away the hard mask and a polysilicon of the dummy gate to expose a gate oxide of the dummy gate, the gate oxide disposed over the central portion of the fin; implanting ions into the central portion of the fin through the gate oxide disposed over the central portion of the fin; and performing an annealing process to re-crystallize the fin. - View Dependent Claims (18, 19, 20)
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Specification