Grapho-epitaxy DSA process with dimension control of template pattern
First Claim
1. A method for defining a template for directed self-assembly (DSA) materials, comprising:
- patterning a resist layer using optical lithography to form a template pattern on a stack, the stack including an anti-reflection coating (ARC) and a mask layer formed over a hydrophilic layer;
forming the template pattern by reactive ion etching the ARC and the mask layer to form template lines which are trimmed to less than a minimum feature size achievable by lithography;
forming hydrophobic spacers on sidewalls of the template lines, the spacers including a fractional width of the minimum feature size;
grafting a neutral brush layer to exposed portions of the hydrophilic layer;
depositing a DSA material between the spacers of the template lines;
annealing the DSA material to form material domains in a form of alternating lines of a first material and a second material, wherein the first material in contact with the spacers includes a fractional size width less than a width of the lines;
adding a metal to the alternating material domains to form an etch resistant material with the second material; and
removing the first material and the spacers by reactive ion etching to form a DSA template pattern for etching underlying materials.
2 Assignments
0 Petitions
Accused Products
Abstract
A method for defining a template for directed self-assembly (DSA) materials includes patterning a resist on a stack including an ARC and a mask formed over a hydrophilic layer. A pattern is formed by etching the ARC and the mask to form template lines which are trimmed to less than a minimum feature size (L). Hydrophobic spacers are formed on the template lines and include a fractional width of L. A neutral brush layer is grafted to the hydrophilic layer. A DSA material is deposited between the spacers and annealed to form material domains in a form of alternating lines of a first and a second material wherein the first material in contact with the spacers includes a width less than a width of the lines. A metal is added to the domains forming an etch resistant second material. The first material and the spacers are removed to form a DSA template pattern.
45 Citations
20 Claims
-
1. A method for defining a template for directed self-assembly (DSA) materials, comprising:
-
patterning a resist layer using optical lithography to form a template pattern on a stack, the stack including an anti-reflection coating (ARC) and a mask layer formed over a hydrophilic layer; forming the template pattern by reactive ion etching the ARC and the mask layer to form template lines which are trimmed to less than a minimum feature size achievable by lithography; forming hydrophobic spacers on sidewalls of the template lines, the spacers including a fractional width of the minimum feature size; grafting a neutral brush layer to exposed portions of the hydrophilic layer; depositing a DSA material between the spacers of the template lines; annealing the DSA material to form material domains in a form of alternating lines of a first material and a second material, wherein the first material in contact with the spacers includes a fractional size width less than a width of the lines; adding a metal to the alternating material domains to form an etch resistant material with the second material; and removing the first material and the spacers by reactive ion etching to form a DSA template pattern for etching underlying materials. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A method for defining a template for directed self-assembly (DSA) materials, comprising:
-
forming a hydrophilic layer over a substrate; forming an optical planarization layer (OPL) on the hydrophilic layer; forming an anti-reflection coating (ARC) on the OPL; patterning a resist layer using optical lithography to form a template pattern on the ARC; forming the template pattern by reactive ion etching the ARC and the mask layer to form template lines which are trimmed to about 0.5 L where L is a minimum feature size achievable by lithography; forming hydrophobic spacers on sidewalls of the template lines, the spacers including a width of about 0.25 L; grafting a neutral brush layer to exposed portions of the hydrophilic layer; depositing a DSA material between the spacers of the template lines; annealing the DSA material to form material domains in a form of alternating lines of a first material and a second material, the lines having a width of about 0.5 L, wherein the first material in contact with the spacers includes a width of about 0.25 L; adding a metal to the alternating material domains to form an etch resistant material with the second material; and removing the first material and the spacers by reactive ion etching to form a DSA template pattern for etching underlying materials. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
-
-
18. A method for defining a template for directed self-assembly (DSA) materials, comprising:
-
forming template lines by reactive ion etching an anti-reflection coating (ARC) and a mask layer and stopping on an underlying hydrophilic layer, which is formed over a semiconductor substrate; trimming the template lines to less than a minimum feature size (L) achievable by lithography by the reactive ion etching; forming hydrophobic spacers on sidewalls of the template lines, the spacers including a fractional width of the minimum feature size; grafting a neutral brush layer to exposed portions of the hydrophilic layer; depositing and annealing a DSA material including a block copolymer material, which is formed between the spacers of the template lines to create material domains in a form of alternating lines of a first material and a second material wherein the first material in contact with the spacers includes a fractional size width less than a width of the lines; selectively depositing a metal on the second material to provide etch resistance; removing the first material and the spacers by reactive ion etching to form a DSA template pattern for etching underlying materials; and etching the substrate to form structures for use in fabricating electronic devices. - View Dependent Claims (19, 20)
-
Specification