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Grapho-epitaxy DSA process with dimension control of template pattern

  • US 8,853,085 B1
  • Filed: 04/23/2013
  • Issued: 10/07/2014
  • Est. Priority Date: 04/23/2013
  • Status: Expired due to Fees
First Claim
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1. A method for defining a template for directed self-assembly (DSA) materials, comprising:

  • patterning a resist layer using optical lithography to form a template pattern on a stack, the stack including an anti-reflection coating (ARC) and a mask layer formed over a hydrophilic layer;

    forming the template pattern by reactive ion etching the ARC and the mask layer to form template lines which are trimmed to less than a minimum feature size achievable by lithography;

    forming hydrophobic spacers on sidewalls of the template lines, the spacers including a fractional width of the minimum feature size;

    grafting a neutral brush layer to exposed portions of the hydrophilic layer;

    depositing a DSA material between the spacers of the template lines;

    annealing the DSA material to form material domains in a form of alternating lines of a first material and a second material, wherein the first material in contact with the spacers includes a fractional size width less than a width of the lines;

    adding a metal to the alternating material domains to form an etch resistant material with the second material; and

    removing the first material and the spacers by reactive ion etching to form a DSA template pattern for etching underlying materials.

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