Method of manufacturing semiconductor device and system for manufacturing semiconductor device

• US 8,853,087 B2
• Filed: 12/17/2010
• Issued: 10/07/2014
• Est. Priority Date: 12/25/2009
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Tanaka, Keisuke, Moriya, Machi
• Primary Examiner(s): Payen, Marvin
• Assistant Examiner(s): BARZYKIN, VICTOR V
• Application Number:
  US13/518,977
• Publication Number:
  US 20120282713A1
• Time in Patent Office: 1,390 Days
• Field of Search: 438/947, 438/401, 438/696, 257/E21.039, 257/E21.257, 257/E21.236, 257/E21.53, 346/400, 346/401, 346/369, 346/399, 346/625, 702/127, 382/144, 382/151, 700/121, 356/400, 356/401, 356/369, 356/399, 356/625, 430/314
• US Class Current: 438/696
• CPC Class Codes: G03F 7/38 Treatment before imagewise removal, e.g. prebaking G03F7/265 takes precedence
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 21/67178 vertical arrangement
• CPC Class Codes: H01L 21/67184 characterized by the presence of more than one transfer chamber
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 438/947 Subphotolithographic processing

Abstract

A target space ratio of a monitor pattern on a substrate for inspection is determined to be different from a ratio of 1:1. A range of space ratios in a library is determined to include the target space ratio and not include a space ratio of 1:1. The monitor pattern is formed on a film to be processed by performing predetermined processes on the substrate for inspection. Sizes of the monitor pattern are measured. The sizes of the monitor pattern are converted into sizes of a pattern of the film to be processed having a space ratio of 1:1, and processing conditions of the predetermined processes are compensated for based on the sizes of the converted pattern of the film to be processed. After that, the predetermined processes are performed on a wafer under the compensated conditions to form a pattern having a space ratio of 1:1 on the film to be processed.

Claims

1. A method of manufacturing a semiconductor device by performing predetermined processes on a substrate to form a pattern including line portions and space portions and having a space ratio of 1:

1 between a width of a first space portion and a width of a second space portion that is adjacent to the first space portion on a film to be processed on the substrate,

wherein the predetermined processes include;

forming a resist pattern formed as a plurality of lines on the film to be processed on the substrate, by performing a photolithography process on the substrate;

trimming the resist pattern;

forming a sacrificial film that is a mask used when etching the film to be processed on the resist pattern;

forming process of forming a pattern of the sacrificial film on the film to be processed on the substrate, wherein the pattern comprises a plurality of lines, by etching the sacrificial film so as to have the sacrificial film remain only on side wall portions of line portions of the resist pattern, and by removing the resist pattern;

forming a pattern of the film to be processed including a plurality of lines on the film to be processed, by etching the film to be processed by using the sacrificial film pattern as a mask;

forming a first monitor pattern which is formed on a sacrificial film of a substrate for inspection in the forming of the sacrificial film pattern and forming a second monitor pattern which is formed on a film to be processed on the substrate for inspection in the forming of the film to be processed pattern by performing predetermined processes on the substrate for inspection, wherein target space ratios of the first and second monitor patterns are different from a ratio of 1;

1;

measuring sizes of the first monitor pattern or the second monitor pattern, in a scatterometry method by using a library including sacrificial film patterns or patterns of the film to be processed, wherein a range of space ratios of the library includes the target space ratio and does not include the space ratio of 1;

1;

converting the sizes of the first or second monitor pattern, which are measured through the measuring of sizes of the first or second monitor pattern, into sizes of a sacrificial film pattern or a pattern of a film to be processed, a space ratio of which is aimed to be 1;

1, by using a regression equation for converting the sizes of the first monitor pattern or the second monitor pattern having the target space ratio into sizes of a sacrificial film pattern or a pattern of a film to be processed having a space ratio of 1;

1;

compensating for processing conditions in the predetermined processes, based on the sizes of the sacrificial film pattern or the pattern of the film to be processed converted in the converting of the sizes of the first or second monitor pattern; and

forming a pattern having a space ratio of 1;

1 on the film to be processed on the substrate, by performing the predetermined processes on the substrate under the compensated processing conditions.

2. The method of claim 1, wherein the target space ratio of the first monitor pattern or the second monitor pattern is determined based on a reproducibility of a distance between a center of a line portion and a center of a neighboring line portion and a reproducibility of sizes of the line portion in the first monitor pattern or in the second monitor pattern.

3. The method of claim 2, wherein the target space ratio of the first monitor pattern or the second monitor pattern is determined so that the reproducibility of the distance is 1.0 nm or less and the reproducibility of the size is 0.2 nm or less.

4. The method of claim 1, wherein in the trimming, the resist pattern is trimmed, and at the same time, an anti-reflection film formed between the film to be processed of the substrate and the resist pattern is etched by using the resist pattern as a mask.

5. The method of claim 1, wherein in the compensating for processing condition, processing conditions of the trimming are compensated for based on a difference between a width of a first space portion and a width of a second space portion in the converted sacrificial film pattern or the converted pattern of the film to be processed in the converting of the sizes.

6. The method of claim 1, wherein in the compensating for processing condition, processing conditions of the forming of the resist pattern are compensated for based on a difference between a width of a first space portion and a width of a second space portion in the converted sacrificial film pattern or the converted pattern of the film to be processed in the converting of the sizes.

7. The method of claim 6, wherein the processing condition compensated in the forming of the resist pattern is a processing condition of an exposure process in the photolithography process.

8. The method of claim 6, wherein the processing condition compensated in the forming of the resist pattern is a processing condition of a thermal process in the photolithography process.

9. The method of claim 8, wherein the thermal process is a heating process performed after the exposure process and before a developing process.

10. The method of claim 1, wherein in the compensating for processing condition, a processing condition of the forming of the sacrificial film is compensated for based on a line width of the line portion in the converted sacrificial film pattern or the converted pattern of the film to be processed in the converting of the sizes.

11. The method of claim 1, wherein in the compensating for processing condition, a processing condition of the forming of the film to be processed pattern is compensated for based on a line width of the line portion in the converted pattern of the film to be processed in the ratio converting of the sizes.

12. The method of claim 1, wherein in the compensating for processing condition, a processing condition of the forming of the film to be processed pattern is compensated for based on a difference between a width of a first space portion and a width of a second space portion in the converted sacrificial film pattern in the converting of the sizes.

13. A method of manufacturing a semiconductor device by performing predetermined processes on a substrate to form a pattern including line portions and space portions and having a space ratio of 1:

1 between a width of a first space portion and a width of a second space portion that is adjacent to the first space portion on a film to be processed on the substrate, the method comprising;

forming a monitor pattern, a target space ratio of which is different from a ratio of 1;

1, by performing the predetermined processes on a substrate for inspection;

measuring sizes of the monitor pattern, in a scatterometry method by using a library including patterns, wherein a range of space ratios of the library includes the target space ratio and does not include the space ratio of 1;

1;

converting the sizes of the monitor pattern, which are measured through the measuring of the sizes of the monitor pattern, into sizes of a pattern, a space ratio of which is aimed to be 1;

1, by using a regression equation for converting the sizes of the monitor pattern having the target space ratio into sizes of a pattern having a space ratio of 1;

1;

compensating for processing conditions in the predetermined processes, based on the sizes of the pattern converted in the converting of the size; and

forming a pattern having a space ratio of 1;

1 on the film to be processed on the substrate, by performing the predetermined processes on the substrate under the compensated processing conditions.

14. The method of claim 13, wherein the target space ratio of the monitor pattern is determined based on a reproducibility of a distance between a center of a line portion and a center of a neighboring line portion and a reproducibility of sizes of the line portion in the monitor pattern.

15. The method of claim 14, wherein the target space ratio of the monitor pattern is determined so that the reproducibility of the distance is 1.0 nm or less and the reproducibility of the size is 0.2 nm or less.

16. A system for manufacturing a semiconductor device by performing predetermined processes on a substrate to form a pattern including line portions and space portions and having a space ratio of 1:

1 between a width of a first space portion and a width of a second space portion that is adjacent to the first space portion on a film to be processed on the substrate, the system including;

a processing unit comprising an applying and developing device and an exposure device which form a resist pattern including a plurality of lines on the film to be processed on the substrate by performing a photolithography process on the substrate, a trimming device which trims the resist pattern, a film forming device which forms a sacrificial film that functions as a mask when etching the film to be processed on the resist pattern, an ashing device which forms a pattern of the sacrificial film on the film to be processed on the substrate, wherein the pattern comprises a plurality of lines, by etching the sacrificial film so as to have the sacrificial film remain only on side wall portions of line portions of the resist pattern, and by removing the resist pattern, and an etching device which form a pattern including a plurality of lines on the film to be processed by etching the film to be processed by using the pattern of the sacrificial film as a mask, and performing the predetermined processes on the substrate;

a pattern size measuring device which measures sizes of the pattern of the sacrificial film or the pattern of the film to be processed;

a controlling device which compensates for processing conditions in the processing unit based on a result of measuring the sizes of the pattern of the sacrificial film or the pattern of the film to be processed,

wherein the controlling device controls the processing unit to form a first monitor pattern formed on a sacrificial film of a substrate for inspection by the film forming device and to form a second monitor pattern formed on a film to be processed on the substrate for inspection by the etching device by performing predetermined processes on the substrate for inspection, wherein target space ratios of the first and second monitor patterns are different from a ratio of 1;

1;

controls the pattern size measuring device to measure sizes of the first monitor pattern or the second monitor pattern formed in the processing unit, in a scatterometry method by using a library including sacrificial film patterns or patterns of the film to be processed, wherein a range of space ratios of the library includes the target space ratio and does not include the space ratio of 1;

1;

converts the sizes of the first or second monitor pattern of the target space ratio, which are measured by the pattern size measuring device, into sizes of a sacrificial film pattern or a pattern of a film to be processed, a space ratio of which is aimed to be 1;

1, by using a regression equation for converting the sizes of the first monitor pattern or the second monitor pattern having the target space ratio into sizes of a sacrificial film pattern or a pattern of a film to be processed having a space ratio of 1;

1; and

compensates for processing conditions in the processing unit based on the sizes of the converted sacrificial film pattern or the pattern of the film to be processed.

17. A system for manufacturing a semiconductor device by performing predetermined processes on a substrate to form a pattern including line portions and space portions and having a space ratio of 1:

1 between a width of a first space portion and a width of a second space portion that is adjacent to the first space portion on a film to be processed on the substrate, the system comprising;

a processing unit which forms a pattern by performing the predetermined processes on a substrate;

a pattern size measuring device which measures sizes of the pattern formed by the processing unit; and

a controlling device which compensates for processing conditions in the processing unit based on a result of measuring the sizes of the pattern,

wherein the controlling device controls the processing unit to form a monitor pattern, a target space ratio of which is different from a ratio of 1;

1, by performing the predetermined processes on a substrate for inspection;

controls the pattern size measuring device to measure sizes of the monitor pattern formed by the processing unit, in a scatterometry method by using a library including patterns, wherein a range of space ratios of the library includes the target space ratio and does not include the space ratio of 1;

1;

converts the sizes of the monitor pattern, which are measured by the pattern size measuring device, into sizes of a pattern, a space ratio of which is aimed to be 1;

1, by using a regression equation for converting the sizes of the monitor pattern having the target space ratio into sizes of a pattern having a space ratio of 1;

1; and

compensates for processing conditions in the processing unit, based on the converted sizes of the pattern.