Particle based neutron detector

• US 8,853,637 B2
• Filed: 11/30/2011
• Issued: 10/07/2014
• Est. Priority Date: 11/30/2011
• Status: Active Grant

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Marcus, Matthew S.
• Primary Examiner(s): Porta, David
• Assistant Examiner(s): Maupin, Hugh H
• Application Number:
  US13/308,170
• Publication Number:
  US 20130134315A1
• Time in Patent Office: 1,042 Days
• Field of Search: 250/370.05
• US Class Current: 250/370.05
• CPC Class Codes: G01T 1/16 Measuring radiation intensity G01T1/29 takes precedence ; self-powered detectors G01T3/006; using an ionisation chamber filled with a liquid or solid, e.g. frozen liquid, dielectric G01T3/008
• CPC Class Codes: G01T 3/08 with semiconductor detectors
• CPC Class Codes: H01L 31/02325 the optical elements not being integrated nor being directly associated with the device
• CPC Class Codes: H01L 31/085 the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays

Abstract

A method and device include a conductive base layer, a semiconducting layer supported by and electrically coupled to the base layer, the semiconductor layer have integrated gadolinium nanoparticles presenting a high cross section to neutron particles, and a conductive top layer electrically coupled to the semiconductor layer, wherein the base layer and top layer are disposed to collect current from electrons resulting from neutron interactions with the gadolinium nanoparticles.

Claims

1. A device comprising:

a conductive base layer;

a conductive semiconductor layer supported by and electrically coupled to the base layer, the semiconductor layer having integrated gadolinium nanoparticles presenting a high cross section to neutron particles, wherein the nanoparticles are coated with a protective material configured to avoid the formation of a polycrystalline aggregate; and

a conductive top layer electrically coupled to the semiconductor, wherein the base layer and top layer are disposed to generate current from electrons resulting from neutron interactions with the gadolinium nanoparticles.

2. The device of claim 1 wherein the semiconductor layer has a thickness adapted to facilitate capture of the resulting electrons by the base and top layers, wherein the conductive base layer is metallic, wherein the conductive top layer is metallic, wherein the base layer is mechanically connected to a first side of the semiconductor layer and the top layer is mechanically connected to a second side of the semiconductor layer, and wherein the first side is opposite the second side.

3. The device of claim 2 wherein the thickness of the semiconductor layer is less than or equal to a path length of resulting electrons.

4. The device of claim 1 and further comprising gadolinium nanoparticles having a diameter less than 100 nanometers.

5. The device of claim 1 and further comprising gadolinium nanoparticles having a diameter less than 10 nanometers.

6. The device of claim 1 and further comprising gadolinium nanoparticles having a diameter of between approximately 100 nanometer and 10 nanometers.

7. The device of claim 1 wherein the semiconductor layer comprises silicon.

8. The device of claim 1 wherein the semiconductor layer comprises conductively doped silicon.

9. The device of claim 1 wherein the semiconductor layer comprises at least one of PbSe and PbS.

10. A method comprising:

forming a conductive base layer;

printing a slurry including a semiconductor layer and having integrated gadolinium nanoparticles presenting a high cross section to neutron particles mixed into the slurry; and

forming a conductive top layer electrically coupled to the semiconductor layer, wherein the base layer and top layer are disposed to generate current from electrons resulting from neutron interactions with the gadolinium nanoparticles.

11. The method of claim 10 and further comprising moving the conductive base layer while adding the semiconductor layer and forming the conductive top layer in a roll-to-roll process.

12. The method of claim 10 wherein the slurry comprises a solvent to give the slurry a specified consistency.

13. The method of claim 10 wherein the semiconductor layer has a thickness adapted to facilitate capture of the resulting electrons by the base and top layers.

14. The method of claim 13 wherein the thickness of the semiconductor layer is less than or equal to a path length of resulting electrons.

15. The method of claim 10 wherein at least some of the gadolinium nanoparticles have a diameter less than 100 nanometers.

16. The method of claim 10 wherein at least some of the gadolinium nanoparticles have a diameter less than 10 nanometers.

17. The method of claim 10, further comprising coating the nanoparticles with a protective material configured to avoid the formation of a polycrystalline aggregate and wherein:

forming the base layer includes forming a metallic base layer,

printing the slurry includes printing the slurry on the base layer to mechanically connect and electrically couple the base layer to the slurry,

curing the slurry, and

forming the conductive top layer includes forming a metallic top layer on the cured slurry.

18. A device comprising:

a conductive base layer;

multiple conductive semiconductor layers supported by the base layer, the semiconductor layers having integrated gadolinium nanoparticles presenting a high cross section to neutron particles, wherein each semiconductor layer is separated by an intermediate conductive layer, and wherein the nanoparticles are coated with a protective material configured to avoid the formation of a polycrystalline aggregate; and

a conductive top layer electrically coupled to a top semiconductor layer of the multiple semiconductor layers, wherein the base layer, intermediate layers, and top layer are electrically coupled in parallel to generate current from electrons resulting from neutron interactions with the gadolinium nanoparticles.

19. The device of claim 18 wherein at least some of the semiconductor layers have a thickness adapted to facilitate capture of the resulting electrons by the base and top layers, wherein the conductive base layer is metallic, wherein the conductive top layer is metallic, wherein the base layer is mechanically connected to a bottom semiconductor layer of semiconductor layers and the top layer is mechanically connected to the top semiconductor layer of the semiconductor layers, and wherein the top semiconductor layer is opposite the bottom semiconductor layer.