Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning
First Claim
Patent Images
1. A semipolar or non-polar III-nitride device, comprising:
- a semipolar or nonpolar III-nitride substrate or epilayer; and
a heterostructure, comprising semipolar or nonpolar III-nitride device layers, grown on the semipolar or nonpolar III-nitride substrate or epilayer, wherein the heterostructure has a misfit dislocation density of 104 cm−
2 or less.
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Abstract
A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension l along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of the substrate or epilayer.
11 Citations
26 Claims
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1. A semipolar or non-polar III-nitride device, comprising:
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a semipolar or nonpolar III-nitride substrate or epilayer; and a heterostructure, comprising semipolar or nonpolar III-nitride device layers, grown on the semipolar or nonpolar III-nitride substrate or epilayer, wherein the heterostructure has a misfit dislocation density of 104 cm−
2 or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of fabricating a substrate for a semipolar or non-polar III-nitride device, comprising:
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patterning and forming one or more mesas on a surface of a semipolar or non-polar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar or non-polar III-nitride substrate or epilayer, wherein; each of the mesas has a dimension l along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a semi-polar or non-polar III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of a semi-polar or non-polar III-nitride substrate or epilayer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A substrate for a semipolar III-nitride device, comprising:
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one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, forming a patterned surface of the semipolar III-nitride substrate or epilayer, wherein; each of the mesas includes a dimension l along a direction of a threading dislocation glide wherein semipolar or nonpolar III-nitride device layers, grown on the semipolar or nonpolar III-nitride substrate or epilayer, have a misfit dislocation density of 104 cm−
2 or less.
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Specification