Semiconductor device, measurement apparatus, and measurement method of relative permittivity

• US 8,853,683 B2
• Filed: 12/13/2010
• Issued: 10/07/2014
• Est. Priority Date: 12/17/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyanaga, Akiharu, Honda, Tatsuya
• Primary Examiner(s): Luke, Daniel
• Assistant Examiner(s): Crawford, Latanya N
• Application Number:
  US12/966,186
• Publication Number:
  US 20110147736A1
• Time in Patent Office: 1,394 Days
• Field of Search: 257/43, 257/E29.296
• US Class Current: 257/43
• CPC Class Codes: G01R 27/2623 Measuring-systems or electronic circuits G01R27/2635, G01R27/2682 take precedence
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H01L 29/94 Metal-insulator-semiconductors, e.g. MOS

Abstract

The field of an oxide semiconductor has been attracted attention in recent years. Therefore, the correlation between electric characteristics of a transistor including an oxide semiconductor layer and physical properties of the oxide semiconductor layer has not been clear yet. Thus, a first object is to improve electric characteristics of the transistor by control of physical properties of the oxide semiconductor layer. A semiconductor device including at least a gate electrode, an oxide semiconductor layer, and a gate insulating layer sandwiched between the gate electrode and the oxide semiconductor layer, where the oxide semiconductor layer has the relative permittivity of equal to or higher than 13 (or equal to or higher than 14), is provided.

Claims

1. A semiconductor device comprising:

a gate electrode;

an oxide semiconductor layer; and

a gate insulating layer between the gate electrode and the oxide semiconductor layer,

wherein the gate electrode is provided over the oxide semiconductor layer, and

wherein a relative permittivity of the oxide semiconductor layer is equal to or higher than 13.

3. The semiconductor device according to claim 1 or 2, wherein the oxide semiconductor layer contains indium, gallium, zinc, and oxygen as a main component.

4. The semiconductor device according to claim 1 or 2, wherein the relative permittivity of the oxide semiconductor layer is equal to or lower than 70.

5. The semiconductor device according to claim 1 or 2, further comprising a channel protective layer over the oxide semiconductor layer.

2. A semiconductor device comprising:

a gate electrode;

an oxide semiconductor layer; and

a gate insulating layer between the gate electrode and the oxide semiconductor layer,

wherein the gate electrode is provided over the oxide semiconductor layer, and

wherein a relative permittivity of the oxide semiconductor layer is equal to or higher than 14.