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Semiconductor device

  • US 8,853,697 B2
  • Filed: 02/26/2013
  • Issued: 10/07/2014
  • Est. Priority Date: 03/01/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a glass substrate containing a metal element;

    an oxide semiconductor film over the glass substrate; and

    an insulating film including metal oxide between the oxide semiconductor film and the glass substrate,wherein the insulating film includes a region in a range of 3 nm or less from a top surface of the insulating film, andwherein a concentration of the metal element in the region is less than or equal to 1×

    1018 atoms/cm3.

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