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High efficacy semiconductor light emitting devices employing remote phosphor configurations

  • US 8,853,712 B2
  • Filed: 10/26/2012
  • Issued: 10/07/2014
  • Est. Priority Date: 11/18/2008
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting apparatus comprising:

  • a wavelength conversion element comprising wavelength conversion material; and

    a plurality of light emitting diodes that are oriented to emit light to impinge upon the wavelength conversion element;

    wherein the semiconductor light emitting apparatus produces greater than 250 lumens per watt at a color temperature of between 2000 K and 8000 K.

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