Semiconductor light-emitting device and light-emitting device package having the same

• US 8,853,719 B2
• Filed: 12/28/2009
• Issued: 10/07/2014
• Est. Priority Date: 12/29/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Park, Hyung Jo
• Primary Examiner(s): CAMPBELL, SHAUN M
• Application Number:
  US12/647,827
• Publication Number:
  US 20100163904A1
• Time in Patent Office: 1,744 Days
• Field of Search: 257/98, 257/E33.062, 257/E33.065
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Provided are a semiconductor light-emitting device and a light-emitting device package having the same. The semiconductor light-emitting device comprises a light-emitting structure, a first electrode unit, and a second electrode layer. The light-emitting structure comprises a plurality of compound semiconductor layers having a rounded side surface at an outer edge. The first electrode unit is disposed on the light-emitting structure. The second electrode layer is disposed under the light-emitting structure.

Claims

1. A semiconductor light-emitting device comprising:

a light-emitting structure that includes a plurality of compound semiconductor layers, at least one of the plurality of compound semiconductor layers including an active layer, and the light-emitting structure having a rounded side surface;

a first electrode unit on the light-emitting structure;

a second electrode layer under the light-emitting structure; and

a channel layer around a region between the second electrode layer and the light-emitting structure,

wherein the channel layer has a top surface and a bottom surface, and a portion of the top surface of the channel layer has an exposed surface and an unexposed surface opposite to each other, the unexposed surface overlapping a portion of the active layer, and

wherein a first thickness between the exposed surface and the bottom surface is substantially identical to a second thickness between the unexposed surface and the bottom surface.

2. The semiconductor light-emitting device according to claim 1, wherein the light-emitting structure is provided in a pillar shape.

3. The semiconductor light-emitting device according to claim 1, wherein the channel layer comprises at least one of SiO₂, SiO_x, SiO_xN_y, Si₃N₄, Al₂O₃, TiO₂, ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), and GZO (gallium zinc oxide).

4. The semiconductor light-emitting device according to claim 1, wherein the light-emitting structure comprises a Group III-V compound semiconductor and comprises:

a first conductivity type semiconductor layer under the first electrode unit;

the active layer under the first conductivity type semiconductor layer; and

a second conductivity type semiconductor layer between the active layer and the second electrode layer.

5. The semiconductor light-emitting device according to claim 4, further comprising at least one of a third conductivity type semiconductor layer, a non-metallic layer and an ohmic layer between the second conductivity type semiconductor layer and the second electrode layer.

6. The semiconductor light-emitting device according to claim 4, wherein a first pattern branches outward from a first electrode pad in at least one shape, and a second pattern is formed in a circular shape or in a same shape as an outer shape of the first conductivity type semiconductor layer.

7. The semiconductor light-emitting device according to claim 1, further comprising a conductive support member under the second electrode layer.

17. The semiconductor light-emitting device according to claim 4, wherein a portion of the channel layer does not vertically overlap the first conductivity type semiconductor layer.

18. The semiconductor light-emitting device according to claim 4, wherein a diameter of the active layer is greater than a diameter of the first conductivity type semiconductor layer, and a diameter of the second conductivity type semiconductor layer is greater than a diameter of the active layer.

19. The semiconductor light-emitting device according to claim 4, wherein an edge portion of the second electrode layer is disposed at a position lower than the second conductivity type semiconductor layer.

20. The semiconductor light-emitting device according to claim 1, wherein the first electrode unit comprises:

a first electrode pad on the light-emitting structure;

a first pattern branched from the first electrode pad; and

a second pattern coupled to an end of the first pattern and that encircles the first electrode pad,

wherein the second pattern of the first electrode unit has a rounded shape that is spaced apart by substantially a same first distance from the rounded side surface of the light-emitting structure, and the second pattern having the rounded shape is spaced apart by a second distance from the first electrode pad, the second distance being greater than the first distance.

8. A semiconductor light-emitting device comprising:

a cylindrical light-emitting structure that includes a plurality of compound semiconductor layers, at least one of the plurality of compound semiconductor layers including an active layer;

a polygonal second electrode layer under the light-emitting structure;

a channel layer around a region between the polygonal second electrode layer and the cylindrical light-emitting structure;

a first electrode pad on the light-emitting structure; and

a circular pattern disposed along a top edge of the light-emitting structure and being connected electrically to the first electrode pad,

wherein the circular pattern has a rounded shape that is spaced apart by substantially a same first distance from a side surface of the cylindrical light-emitting structure, and the circular pattern having the rounded shape is spaced apart by a second distance from the first electrode pad, the second distance being greater than the first distance, and

wherein the channel layer has a top surface and a bottom surface, and a portion of the top surface of the channel layer has an exposed surface and an unexposed surface opposite to each other, the unexposed surface overlapping a portion of the active layer, and

wherein a first thickness between the exposed surface and the bottom surface is identical to a second thickness between the unexposed surface and the bottom surface.

9. The semiconductor light-emitting device according to claim 8, wherein the light-emitting structure comprises a Group III-V compound semiconductor and comprises:

an N-type semiconductor layer under the first electrode pad;

the active layer under the N-type semiconductor layer; and

a P-type semiconductor layer under the active layer.

10. The semiconductor light-emitting device according to claim 8, wherein the second electrode layer comprises a reflective metal having a polygonal plate shape, and the light-emitting device comprises a conductive support member under the second electrode layer.

11. The semiconductor light-emitting device according to claim 9, wherein the compound semiconductor layers comprise disk shapes with a same diameter or different diameters.

12. The semiconductor light-emitting device according to claim 9, further comprising a transparent channel layer at an outer edge between the P-type semiconductor layer and the second electrode layer, and the channel layer comprises at least one of an oxide-based material or a nitride-based material.

13. The semiconductor light-emitting device according to claim 8, wherein an outer side of the second electrode layer extends outward from an outer side of the light-emitting structure.

14. The semiconductor light-emitting device according to claim 9, wherein the P-type semiconductor layer has a larger diameter than the N-type semiconductor layer.

15. A light-emitting device package comprising:

a light-emitting device comprising;

a cylindrical light-emitting structure that includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer;

a second electrode layer under the second conductivity type semiconductor layer;

a channel layer around a region between the second electrode layer and the cylindrical light-emitting structure; and

a first electrode unit on the first conductivity type semiconductor layer;

a body unit having an opened cavity at a top of the body unit, and

a plurality of lead electrodes disposed in the cavity of the body unit and connected electrically to the first electrode unit and the second electrode layer,

wherein the channel layer has a top surface and a bottom surface, and a portion of the top surface of the channel layer has an exposed surface and an unexposed surface opposite to each other, the unexposed surface overlapping a portion of the active layer, and

wherein a first thickness between the exposed surface and the bottom surface is substantially identical to a second thickness between the unexposed surface and the bottom surface.

16. The light-emitting device package according to claim 15, further comprising a resin material formed in the cavity.