Semiconductor device including trenches and method of manufacturing a semiconductor device
First Claim
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1. A semiconductor device, comprising:
- a first transistor cell including a first gate electrode in a first trench;
a second transistor cell including a second gate electrode in a second trench, wherein the first and second gate electrodes are electrically connected;
a third trench between the first and second trenches, wherein the third trench extends deeper into a semiconductor body from a first side of the semiconductor body than the first and second trenches; and
a dielectric in the third trench covering a bottom side and walls of the third trench,wherein a thickness of the dielectric lining a wall of the third trench at a vertical level coinciding with a gate dielectric in the first and second trenches is greater than a thickness of the gate dielectric in the first and second trenches.
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Abstract
A semiconductor device includes a first transistor cell including a first gate electrode in a first trench. The semiconductor device further includes a second transistor cell including a second gate electrode in a second trench, wherein the first and second gate electrodes are electrically connected. The semiconductor device further includes a third trench between the first and second trenches, wherein the third trench extends deeper into a semiconductor body from a first side of the semiconductor body than the first and second trenches. The semiconductor device further includes a dielectric in the third trench covering a bottom side and walls of the third trench.
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Citations
25 Claims
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1. A semiconductor device, comprising:
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a first transistor cell including a first gate electrode in a first trench; a second transistor cell including a second gate electrode in a second trench, wherein the first and second gate electrodes are electrically connected; a third trench between the first and second trenches, wherein the third trench extends deeper into a semiconductor body from a first side of the semiconductor body than the first and second trenches; and a dielectric in the third trench covering a bottom side and walls of the third trench, wherein a thickness of the dielectric lining a wall of the third trench at a vertical level coinciding with a gate dielectric in the first and second trenches is greater than a thickness of the gate dielectric in the first and second trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of manufacturing a semiconductor device, comprising:
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forming a first transistor cell including a first gate electrode in a first trench; forming a second transistor cell including a second gate electrode in a second trench, wherein the first and second gate electrodes are electrically connected; forming a third trench between the first and second trenches, wherein the third trench extends deeper into a semiconductor body from a first side of the semiconductor body than the first and second trenches; and forming a dielectric in the third trench covering a bottom side and sidewalls of the third trench, wherein forming the first, second and third trenches includes forming a patterned mask at the first side, wherein the patterned mask includes a first type of opening having a greater lateral width than a second type of opening, and etching the first and second trenches through the second type of opening and the third trench through the first type of opening. - View Dependent Claims (21, 22, 23)
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24. A method of manufacturing a semiconductor device, comprising:
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forming a first transistor cell including a first gate electrode in a first trench; forming a second transistor cell including a second gate electrode in a second trench, wherein the first and second gate electrodes are electrically connected; forming a third trench between the first and second trenches, wherein the third trench extends deeper into a semiconductor body from a first side of the semiconductor body than the first and second trenches; forming a dielectric in the third trench covering a bottom side and sidewalls of the third trench; and introducing dopants through a bottom side of the third trench into the semiconductor body before filling up the third trench.
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25. A semiconductor device, comprising:
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a first transistor cell including a first gate electrode in a first trench; a second transistor cell including a second gate electrode in a second trench, wherein the first and second gate electrodes are electrically connected; a third trench between the first and second trenches, wherein the third trench extends deeper into a semiconductor body from a first side of the semiconductor body than the first and second trenches; and a dielectric in the third trench covering a bottom side and walls of the third trench, wherein the semiconductor body includes a drift zone of a first conductivity type adjoining a bottom side of a body region of a second conductivity type complementary to the first conductivity type, wherein a second semiconductor region of the second conductivity type including a net doping concentration higher than the drift zone adjoins a bottom side of the first and second trenches.
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Specification