MEMS devices and fabrication thereof

• US 8,853,797 B2
• Filed: 05/06/2009
• Issued: 10/07/2014
• Est. Priority Date: 05/12/2008
• Status: Active Grant

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: NXP B.V. (NXP Semiconductors NV)
• Inventors: Van Schaijk, Robertus T. F.
• Primary Examiner(s): SHINGLETON, MICHAEL B
• Application Number:
  US12/990,123
• Publication Number:
  US 20110260267A1
• Time in Patent Office: 1,980 Days
• Field of Search: 361/278, 200/181, 359/224, 359/291, 257/414, 257/415, 257/417, 257/E27.001, 438/52
• US Class Current: 257/414
• CPC Class Codes: B81B 2201/016 having a bridge fixed on two ends and connected to one or more dimples
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 3/0078 Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
• CPC Class Codes: B81B 3/0086 Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage

Abstract

A MEMS device and method, comprising: a substrate; a beam; and a cavity located therebetween; the beam comprising a first beam layer and a second beam layer, the first beam layer being directly adjacent to the cavity, the second beam layer being directly adjacent to the first beam layer; the first beam layer comprising a metal or a metal alloy containing silicon; and the second beam layer comprising a metal or a metal alloy substantially not containing silicon. Preferably the second beam layer is thicker than the first beam layer e.g. at least five times thicker, and the first beam layer comprises a metal or alloy containing between 1% and 2% of silicon. The second beam layer provides desired mechanical and/or optical properties while the first beam layer prevents spiking.

Claims

1. A MEMS device, comprising:

a silicon substrate;

a beam; and

a cavity;

the cavity being located between the silicon substrate and the beam;

wherein

the beam includes a first beam layer and a second beam layer, the first beam layer being directly adjacent to the cavity, the second beam layer being directly adjacent to the first beam layer;

the first beam layer includes silicon dissolved in a metal layer and is configured and arranged to use the silicon to mitigate spiking of silicon from an adjacent layer upon contact between the first beam layer and the adjacent layer, wherein the first beam layer is formed by co-depositing silicon and metal simultaneously onto the silicon substrate; and

the second beam layer includes a metal alloy.

2. A MEMS device according to claim 1, wherein the second beam layer is thicker than the first beam layer.

3. A MEMS device according to claim 1, wherein the second beam layer is at least five times thicker than the first beam layer.

4. A MEMS device according to claim 1, wherein the first beam layer has a thickness in the range 100-500 nm.

5. A MEMS device according to claim 1, wherein the second beam layer has a thickness in the range 500 nm-5 μ

m.

6. A MEMS device according to claim 1, wherein

the second beam layer is at least five times thicker than the first beam layer, and

the first beam layer is configured and arranged to prevent spiking of silicon from the adjacent layer into the second beam layer.

7. A MEMS device according to claim 1, wherein the second beam layer includes one of the alloys selected from aluminium alloy with Cu, Ti or Mn to substantially provide mechanical and optical properties of the beam.

8. A method of fabricating a MEMS beam, comprising:

providing a silicon substrate;

depositing a silicon-based sacrificial layer onto the silicon substrate;

after the silicon-based sacrificial layer is deposited, forming a first beam layer onto the silicon-based sacrificial layer and the silicon substrate by co-depositing silicon and metal simultaneously onto the silicon-based sacrificial layer and the silicon substrate;

depositing a second beam layer onto the first beam layer; and

removing the silicon-based sacrificial layer thereby providing a cavity between the silicon substrate and the first beam layer.

9. A method according to claim 8, wherein the second beam layer is thicker than the first beam layer.

10. A method according to claim 8, wherein the second beam layer is at least five times thicker than the first beam layer.

11. A method according to claim 8, wherein the first beam layer has a thickness in the range 100-500 nm.

12. A method according to claim 8, wherein the second beam layer has a thickness in the range 500 nm-5 μ

m.

13. A method according to claim 8, wherein the second beam layer includes one of the alloys selected from aluminium alloy with Cu, Ti or Mn to provide mechanical or optical properties of the MEMS beam.

14. A method according to claim 8, wherein the silicon-based sacrificial layer comprises amorphous silicon.

15. A MEMS device, comprising:

a silicon substrate;

a beam including

a first beam layer being composed of a metal alloy including dissolved silicon and being formed by co-depositing silicon and metal simultaneously onto the silicon substrate; and

a second beam layer, being at least five times thicker than the first beam layer and directly adjacent thereto, and configured and arranged to provide optical and mechanical properties of the beam, the first beam layer being configured and arranged to use the silicon to prevent spiking of silicon into the second beam layer from an adjacent material layer, upon contact with the adjacent material layer; and

a cavity arranged between the silicon substrate and the first beam layer.

16. The MEMS device of claim 15, wherein the first beam layer is 100 nm thick, and the second beam layer is 500 nm thick and includes aluminium copper alloy.