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MEMS devices and fabrication thereof

  • US 8,853,797 B2
  • Filed: 05/06/2009
  • Issued: 10/07/2014
  • Est. Priority Date: 05/12/2008
  • Status: Active Grant
First Claim
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1. A MEMS device, comprising:

  • a silicon substrate;

    a beam; and

    a cavity;

    the cavity being located between the silicon substrate and the beam;

    whereinthe beam includes a first beam layer and a second beam layer, the first beam layer being directly adjacent to the cavity, the second beam layer being directly adjacent to the first beam layer;

    the first beam layer includes silicon dissolved in a metal layer and is configured and arranged to use the silicon to mitigate spiking of silicon from an adjacent layer upon contact between the first beam layer and the adjacent layer, wherein the first beam layer is formed by co-depositing silicon and metal simultaneously onto the silicon substrate; and

    the second beam layer includes a metal alloy.

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