Magnetic devices and methods of fabricating the same

• US 8,853,807 B2
• Filed: 05/24/2012
• Issued: 10/07/2014
• Est. Priority Date: 05/24/2011
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kang, Sangbeom, Son, Jongpil
• Primary Examiner(s): Such, Matthew W
• Assistant Examiner(s): Naraghi, Ali
• Application Number:
  US13/479,337
• Publication Number:
  US 20120299133A1
• Time in Patent Office: 866 Days
• Field of Search: 257421-422, 257/427, 257/E29.323, 365/157, 365/171, 365/360, 365/324.2
• US Class Current: 257/421
• CPC Class Codes: H01L 29/82 controllable by variation of the magnetic field applied to the device
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

Magnetic devices and methods of fabricating the same are provided. According to the magnetic device, a tunnel barrier pattern is interposed between a first magnetic pattern and a second magnetic pattern. An edge portion of the tunnel barrier pattern is thicker than a central portion of the tunnel barrier pattern. The central portion of the tunnel barrier pattern has a substantially uniform thickness.

Claims

1. A magnetic device comprising:

a first magnetic pattern and a second magnetic pattern disposed on a substrate;

a tunnel barrier pattern interposed between the first magnetic pattern and the second magnetic pattern; and

a residual capping pattern interposed between a central portion of the tunnel barrier pattern and the second magnetic pattern,

wherein an edge portion of the tunnel barrier pattern is thicker than the central portion of the tunnel barrier pattern, wherein the central portion of the tunnel barrier pattern has a substantially uniform thickness, and

wherein a lower surface of the second magnetic pattern contacts with an upper surface of the residual capping pattern and an upper surface of the edge portion of the tunnel barrier pattern.

2. The magnetic device of claim 1, wherein the residual capping pattern is made of metal and the tunnel barrier pattern includes metal oxide.

3. The magnetic device of claim 2, wherein the metal oxide in the tunnel barrier pattern includes the same metal as the residual capping pattern.

4. The magnetic device of claim 1, wherein the first magnetic pattern, the tunnel barrier pattern and the second magnetic pattern are sequentially stacked;

a top surface of the edge portion of the tunnel barrier pattern is disposed at a level higher than a top surface of the central portion of the tunnel barrier pattern; and

a bottom surface of the edge portion of the tunnel barrier pattern is substantially coplanar with a bottom surface of the central portion of the tunnel barrier pattern.

5. The magnetic device of claim 1, wherein a maximum thickness of the edge portion of the tunnel barrier pattern is equal to or less than about five times a thickness of the central portion of the tunnel barrier pattern.

6. The magnetic device of claim 1, wherein one of the first and second magnetic patterns has a fixed magnetization direction in one direction;

and

wherein the other of the first and second magnetic patterns has a magnetization direction switchable between parallel to and anti-parallel to the fixed magnetization direction.

7. The magnetic device of claim 6, wherein the magnetization directions of the first and second magnetic patterns are substantially parallel to a surface of the tunnel barrier pattern, which is adjacent to the first magnetic pattern.

8. The magnetic device of claim 6, wherein the magnetization directions of the first and second magnetic patterns are substantially perpendicular to a surface of the tunnel barrier pattern, which is adjacent to the first magnetic pattern.

9. A system on chip comprising:

a processor; and

a magnetic device electrically coupled to the processor, the memory device including;

a first magnetic pattern and a second magnetic pattern disposed on a substrate;

a tunnel barrier pattern interposed between the first magnetic pattern and the second magnetic pattern; and

a residual capping pattern interposed between a central portion of the tunnel barrier pattern and the second magnetic pattern,

wherein an edge portion of the tunnel barrier pattern is thicker than the central portion of the tunnel barrier pattern, wherein the central portion of the tunnel barrier pattern has a substantially uniform thickness, and

wherein a lower surface of the second magnetic pattern contacts with an upper surface of the residual capping pattern and an upper surface of the edge portion of the tunnel barrier pattern.

10. A magnetic device comprising:

a first magnetic pattern and a second magnetic pattern disposed on a substrate; and

a tunnel barrier pattern interposed between the first magnetic pattern and the second magnetic pattern,

wherein an edge portion of the tunnel barrier pattern is thicker than a central portion of the tunnel barrier pattern,

wherein the central portion of the tunnel barrier pattern has a substantially uniform thickness, and

wherein the width of the central portion comprises a majority of the width of the tunnel barrier pattern.

11. The magnetic device of claim 10, further comprising a residual capping pattern interposed between the central portion of the tunnel barrier pattern and the second magnetic pattern.

12. The magnetic device of claim 11, wherein a lower surface of the second magnetic pattern contacts with an upper surface of the residual capping pattern and an upper surface of the edge portion of the tunnel barrier pattern.