Interconnection structure, apparatus therewith, circuit structure therewith

• US 8,853,848 B2
• Filed: 05/17/2011
• Issued: 10/07/2014
• Est. Priority Date: 01/24/2011
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Wu, Shih-Hsien
• Primary Examiner(s): Nguyen, Cuong Q
• Assistant Examiner(s): Gebreyesus, Yosef
• Application Number:
  US13/109,016
• Publication Number:
  US 20120187550A1
• Time in Patent Office: 1,239 Days
• Field of Search: 174/255, 333/33, 333/246, 257/275, 257/690, 257/692, 257/659, 257/664, 257/259, 257/442, 257/508, 257/660, 257/669, 257/9, 257/662, 257/208, 257/E31.122, 257/E29.282
• US Class Current: 257/690
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 23/147 Semiconductor insulating substrates semiconductor conductive substrates H01L23/4926
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 1/0222 for shielding around a single via or around a group of vias, e.g. coaxial vias or vias surrounded by a grounded via fence
• CPC Class Codes: H05K 2201/096 Vertically aligned vias, holes or stacked vias

Abstract

An interconnection structure is disposed between a first conductive layer and a second conductive layer substantially parallel to each other. The conductive layer includes a signal trace. The interconnection structure includes a conductor pillar and a shielding wall pillar. The conductor pillar goes through between the two conductive layers and is electrically connected to the signal trace of the first conductive layer. The shielding wall pillar is also disposed between the two conductive layers and located at a portion of an external region surrounding the conductor pillar and electrically coupled to the conductor pillar. The conductor pillar and the shielding wall pillar are disposed in pair or in group. The shielding wall pillar with a shape different from that of the conductor pillar would make the conductor pillar serve as a connection with a designed impedance and the capability of controlling impedance based on the special shape design thereof.

Claims

1. An interconnection structure, disposed between a first conductive layer and a second conductive layer substantially parallel to each other and including a first signal trace and a second signal trace, respectively, the interconnection structure comprising:

a conductor pillar, arranged between the first conductive layer and the second conductive layer, and electrically connected to the first signal trace and the second signal trace; and

a shielding wall pillar structure, disposed at a portion of an external region surrounding the conductor pillar and electrically connected to a reference conductive wire, wherein;

the shielding wall pillar structure includes at least a first area facing the conductor pillar, the first area being a continuous surface and greater than a second area formed by projecting the conductor pillar onto the shielding wall pillar structure, and

the first area includes a sub-area extending along a direction parallel to the conductor pillar between an upper end coplanar with an upper surface of the first signal trace and a lower end coplanar with a lower surface of the second signal trace, the sub-area intersecting with an imaginary extension of the first signal trace and having a same width as the first signal trace.

2. The interconnection structure as claimed in claim 1, wherein:

a cross-sectional shape of the conductor pillar is a first geometric shape and a cross-sectional shape of the shielding wall pillar structure is a second geometric shape, and

the first geometric shape is different from the second geometric shape.

3. The interconnection structure as claimed in claim 2, wherein the cross-sectional shape of the conductor pillar is a circle shape.

4. The interconnection structure as claimed in claim 2, wherein:

the first geometric shape is a circle shape,

the second geometric shape is a semi-moon shape, and

a concave edge of the semi-moon shape faces or backs to the conductor pillar.

5. The interconnection structure as claimed in claim 1, wherein:

the reference conductive wire is located at one of a ground layer or a power layer, and

the ground layer or the power layer is substantially parallel to at least one of the first conductive layer and the second conductive layer.

6. The interconnection structure as claimed in claim 1, wherein the reference conductive wire is:

located at the second conductive layer,

electrically isolated from the second signal trace, and

electrically connected to a ground layer or a power layer.

7. The interconnection structure as claimed in claim 1, further comprising:

a plurality of the shielding wall pillar structures,

wherein the shielding wall pillar structures surround the conductor pillar.

8. An apparatus, comprising a medium plate and the interconnection structure as claimed in claim 1, wherein the interconnection structure is disposed at the medium plate.

9. The apparatus as claimed in claim 8, wherein the medium plate includes one of a silicon structure, a glass structure, a printed circuit board structure, or a ceramic substrate.

10. An apparatus, comprising a silicon plate and the interconnection structure as claimed in claim 1, wherein the silicon plate includes:

a first insulation layer and a second insulation layer, the first conductive layer being disposed at a side of the first insulation layer, and the second conductive layer being disposed at a side of the second insulation layer;

a first through hole and a second through hole, the conductor pillar being disposed in the first through hole, and at least a portion of the shielding wall pillar structure being disposed in the second through hole;

a first insulation medium, located between a side wall of the first through hole and the conductor pillar, a cross-sectional shape of the first through hole being a first geometric shape; and

a second insulation medium, located between a side wall of the second through hole and the shielding wall pillar structure, a cross-sectional shape of the second through hole being a second geometric shape different from the first geometric shape.

11. The apparatus as claimed in claim 10, wherein the first geometric shape is circle shape.

12. The apparatus as claimed in claim 10, wherein:

the first geometric shape is circle shape,

the second geometric shape is semi-moon shape, and

a concave edge of the semi-moon shape faces or backs to the conductor pillar.

13. The interconnection structure as claimed in claim 1, wherein a horizontal cross section of the shielding wall pillar structure has a semi-annular shape.

14. An interconnection structure, disposed between a first conductive layer and a second conductive layer substantially parallel to each other, the first conductive layer including a signal trace, the interconnection structure comprising:

a conductor pillar, arranged between the first conductive layer and the second conductive layer, and electrically connected to the signal trace; and

a shielding wall pillar structure, disposed at a portion of an external region surrounding the conductor pillar, wherein;

the shielding wall pillar structure includes at least a first area facing the conductor pillar, the first area being a continuous surface and greater than a second area formed by projecting the conductor pillar onto the shielding wall pillar structure, and

the first area includes a sub-area extending along a direction parallel to the conductor pillar between an upper end coplanar with an upper surface of the first conductive layer and a lower end coplanar with a lower surface of the second conductive layer, the sub-area intersecting with an imaginary extension of the signal trace and having a same width as the signal trace.

15. The interconnection structure as claimed in claim 14, wherein:

a cross-sectional shape of the conductor pillar is a first geometric shape and a cross-sectional shape of the shielding wall pillar structure is a second geometric shape, and

the first geometric shape is different from the second geometric shape.

16. The interconnection structure as claimed in claim 15, wherein the cross-sectional shape of the conductor pillar is a circle shape.

17. The interconnection structure as claimed in claim 15, wherein:

the first geometric shape is a circle shape,

the second geometric shape is a semi-moon shape, and

a concave edge of the semi-moon shape faces frontward or backward to the conductor pillar.

18. The interconnection structure as claimed in claim 14, further comprising:

a plurality of shielding wall pillar structures,

wherein the shielding wall pillar structures surround the conductor pillar.

19. A circuit structure, comprising:

a first conductive layer, including a first signal trace;

a second conductive layer, including a second signal trace, the second conductive layer being substantially parallel to the first conductive layer;

a reference conductive wire, located between the first conductive layer and the second conductive layer;

a conductor pillar, arranged between the first conductive layer and the second conductive layer, the conductor pillar being electrically connected to the first signal trace and the second signal trace and being electrically isolated from the reference conductive wire; and

a shielding wall pillar structure, disposed at a portion of an external region surrounding the conductor pillar and electrically connected to the reference conductive wire, wherein;

the shielding wall pillar structure includes at least a first area facing the conductor pillar, the first area being a continuous surface and greater than a second area formed by projecting the conductor pillar onto the shielding wall pillar structure, and

the first area includes a sub-area extending along a direction parallel to the conductor pillar between an upper end coplanar with an upper surface of the first signal trace and a lower end coplanar with a lower surface of the second signal trace, the sub-area intersecting with an imaginary extension of the first signal trace and having a same width as the first signal trace.

20. The circuit structure as claimed in claim 19, wherein:

a cross-sectional shape of the conductor pillar is a first geometric shape and a cross-sectional shape of the shielding wall pillar structure is a second geometric shape, and

the first geometric shape is different from the second geometric shape.

21. The circuit structure as claimed in claim 20, wherein the cross-sectional shape of the conductor pillar is a circle shape.

22. The circuit structure as claimed in claim 20, wherein:

the first geometric shape is a circle shape,

the second geometric shape is a semi-moon shape, and

a concave edge of the semi-moon shape faces frontward or backward to the conductor pillar.

23. The circuit structure as claimed in claim 19, wherein the reference conductive wire is located at a ground layer or a power layer, and the ground layer or the power layer is disposed between the first conductive layer and the second conductive layer.

24. The circuit structure as claimed in claim 19, wherein the reference conductive wire is:

located at the second conductive layer,

electrically isolated from the second signal trace, and

electrically connected to one of a ground level or a power level.

25. The circuit structure as claimed in claim 19, further comprising a plurality of the shielding wall pillar structures,

wherein the shielding wall pillar structures surround the conductor pillar.