Nonvolatile memory device and method of programming the same
First Claim
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1. A 4-bit MLC programming method of a nonvolatile memory device, the method comprising:
- inputting an mth program operation command; and
sequentially executing first to fourth logical page program operations according to first to fourth logical page program start voltages, each stored in first to fourth logical page program start voltage storage units,wherein a program voltage, which is applied at a time point at which a memory cell programmed higher than a lowest verify voltage while a program operation of each logical page is performed occurs for a first time, is updated to each logical page program start voltage.
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Abstract
A method of 4-bit MLC programming a nonvolatile memory device includes inputting an mth program operation command and sequentially executing first to fourth logical page program operations according to first to fourth logical page program start voltages, each stored in first to fourth logical page program start voltage storage units, wherein a program voltage, which is applied at a time point at which a memory cell programmed higher than a lowest verify voltage while a program operation of each logical page is performed occurs for a first time, is updated to each logical page program start voltage.
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Citations
17 Claims
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1. A 4-bit MLC programming method of a nonvolatile memory device, the method comprising:
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inputting an mth program operation command; and sequentially executing first to fourth logical page program operations according to first to fourth logical page program start voltages, each stored in first to fourth logical page program start voltage storage units, wherein a program voltage, which is applied at a time point at which a memory cell programmed higher than a lowest verify voltage while a program operation of each logical page is performed occurs for a first time, is updated to each logical page program start voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A nonvolatile memory device, comprising:
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a plurality of a memory chips, each configured to include memory blocks including 4-bit or higher multi-level memory cells for storing data and peripheral circuits for programming the memory cells or reading data stored in the memory cells; a program start voltage storage unit configured to store program start voltage information about each of the plurality of memory chips; and a controller configured to repeat a program operation and a program verify operation for a page of the memory chip, selected in response to a program command, from among the pages, until a result of the program verify operation is a path, wherein, in the program operation, the controller supplies a program voltage raised by a step voltage from a program start voltage based on the program start voltage information, stored in the program start voltage storage unit and set based on the selected memory chip, to the selected page and controls the peripheral circuits and the program start voltage storage unit so that information based on a program voltage in a time point at which a memory cell for which the program operation is a pass is first generated, as a result of the program verify operation, is updated into the program start voltage information of the selected memory chip. - View Dependent Claims (9, 10, 11)
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12. A nonvolatile memory device, comprising:
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a plurality of memory blocks each configured to include 4-bit or higher multi-level memory cells for storing data; peripheral circuits configured to program the memory cells or read data stored in the memory cells; a program start voltage storage unit configured to store program start voltage information about each of pages of each of the memory blocks; and a controller configured to repeat a program operation and a program verify operation for a page selected in response to a program command, from among the pages, until a result of the program verify operation is a path, wherein, in the program operation, the controller supplies a program voltage, raised by a step voltage from a program start voltage based on the program start voltage information set based on the selected page, to the selected page and controls the peripheral circuits and the program start voltage storage unit so that information based on a program voltage in a time point at which a memory cell for which the program operation is a pass is first generated, as a result of the program verify operation, is updated into the program start voltage information of the selected memory chip. - View Dependent Claims (13)
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14. A method of programming a nonvolatile memory device, comprising:
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receiving a program operation command to the nonvolatile memory device including 4-bit multi-level memory cells; sequentially selecting first to fourth logical pages of a first word line, in response to a program operation command, and repeatedly performing a program operation and a program verify operation for the first word line until a result of the program verify operation is a path, wherein, in the program operation, a program voltage raised by a step voltage from a program start voltage based on program start voltage information set according to a selected logical page is supplied to the first word line and information about a program voltage supplied in a time point at which a memory cell for which the program operation is a path is first generated during the program verify operation is updated into the program start voltage information of the selected logical page. - View Dependent Claims (15, 16, 17)
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Specification