Tool and method for modeling interposer RC couplings
First Claim
1. A method comprising:
- analyzing front side conductive patterns and back side conductive patterns on a semiconductor interposer using a machine implemented RC extraction tool, and outputting data representing a plurality of respective RC nodes from the RC extraction tool to a tangible persistent machine readable storage medium;
generating a substrate mesh model of the semiconductor interposer having a plurality of substrate mesh nodes, wherein each substrate mesh node is connected to adjacent ones of the plurality of substrate mesh nodes by respective substrate impedance elements, wherein the interposer has at least one through-substrate via (TSV) extending from the front side of the interposer to the back side of the interposer, the TSV is located at one of the substrate mesh nodes, and the substrate impedance elements adjacent to the TSV have different resistance and capacitance values than other ones of the plurality of substrate impedance elements that are not adjacent to the TSV;
forming a set of inputs to a timing analysis tool, wherein the plurality of RC nodes are connected to ones of the plurality of substrate mesh nodes of the substrate mesh model; and
storing the set of inputs in a tangible machine readable storage medium.
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Abstract
A method comprises analyzing front side conductive patterns and back side conductive patterns on a semiconductor interposer using a machine implemented RC extraction tool, and outputting data representing a plurality of respective RC nodes from the RC extraction tool to a tangible persistent machine readable storage medium. A substrate mesh model of the semiconductor interposer is generated, having a plurality of substrate mesh nodes. Each substrate mesh node is connected to adjacent ones of the plurality of substrate mesh nodes by respective substrate impedance elements. A set of inputs to a timing analysis tool is formed. The plurality of RC nodes are connected to ones of the plurality of substrate mesh nodes of the substrate mesh model. The set of inputs is stored in a tangible machine readable storage medium.
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Citations
20 Claims
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1. A method comprising:
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analyzing front side conductive patterns and back side conductive patterns on a semiconductor interposer using a machine implemented RC extraction tool, and outputting data representing a plurality of respective RC nodes from the RC extraction tool to a tangible persistent machine readable storage medium; generating a substrate mesh model of the semiconductor interposer having a plurality of substrate mesh nodes, wherein each substrate mesh node is connected to adjacent ones of the plurality of substrate mesh nodes by respective substrate impedance elements, wherein the interposer has at least one through-substrate via (TSV) extending from the front side of the interposer to the back side of the interposer, the TSV is located at one of the substrate mesh nodes, and the substrate impedance elements adjacent to the TSV have different resistance and capacitance values than other ones of the plurality of substrate impedance elements that are not adjacent to the TSV; forming a set of inputs to a timing analysis tool, wherein the plurality of RC nodes are connected to ones of the plurality of substrate mesh nodes of the substrate mesh model; and storing the set of inputs in a tangible machine readable storage medium. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A system comprising:
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a processor-implemented RC extraction tool for analyzing front side conductive patterns and back side conductive patterns on a semiconductor interposer, and outputting data representing a plurality of respective RC nodes; a processor-implemented substrate extraction tool for generating a substrate mesh model of the semiconductor interposer having a plurality of substrate mesh nodes, wherein each substrate mesh node is connected to adjacent ones of the plurality of substrate mesh nodes by respective substrate impedance elements, wherein the interposer has at least one through-substrate via (TSV) extending from the front side of the interposer to the back side of the interposer, the TSV is located at one of the substrate mesh nodes, and the substrate impedance elements adjacent to the TSV have different resistance and capacitance values than other ones of the plurality of substrate impedance elements that are not adjacent to the TSV; and a tangible persistent machine readable storage medium for storing a set of inputs to a timing analysis tool, wherein the plurality of RC nodes are connected to ones of the plurality of substrate mesh nodes of the substrate mesh model. - View Dependent Claims (16, 17)
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18. A tangible persistent machine readable storage medium having machine readable program instructions encoded therein, such that when the program instructions are executed by a processor, the processor performs a method comprising:
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analyzing front side conductive patterns and back side conductive patterns on a semiconductor interposer using a machine implemented RC extraction tool, and outputting data representing a plurality of respective RC nodes from the RC extraction tool; generating a substrate mesh model of the semiconductor interposer having a plurality of substrate mesh nodes, wherein each substrate mesh node is connected to adjacent ones of the plurality of substrate mesh nodes by respective substrate impedance elements, wherein the interposer has at least one through-substrate via (TSV) extending from the front side of the interposer to the back side of the interposer, the TSV is located at one of the substrate mesh nodes, and the substrate impedance elements adjacent to the TSV have different resistance and capacitance values than other ones of the plurality of substrate impedance elements that are not adjacent to the TSV; forming a set of inputs to a timing analysis tool, wherein the plurality of RC nodes are connected to ones of the plurality of substrate mesh nodes of the substrate mesh model; and storing the set of inputs in a tangible machine readable storage medium. - View Dependent Claims (19, 20)
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Specification