Piezoelectric microcantilevers and uses in atomic force microscopy

• US 8,857,248 B2
• Filed: 06/14/2011
• Issued: 10/14/2014
• Est. Priority Date: 11/28/2006
• Status: Expired due to Fees

• Current Assignee: Drexel University
• Original Assignee: Drexel University
• Inventors: Shih, Wan Y., Shih, Wei-Heng, Shen, Zuyan, Zhu, Qing
• Primary Examiner(s): Williams, Hezron E
• Assistant Examiner(s): Frank, Rodney T
• Application Number:
  US13/160,304
• Publication Number:
  US 20110265227A1
• Time in Patent Office: 1,218 Days
• Field of Search: 731/05, 116/275
• US Class Current: 73/105
• CPC Class Codes: B82Y 35/00 Methods or apparatus for measurement or analysis of nanostructures
• CPC Class Codes: G01B 9/04 Measuring microscopes
• CPC Class Codes: G01Q 10/045 Self-actuating probes, i.e. wherein the actuating means for driving are part of the probe itself, e.g. piezoelectric means on a cantilever probe
• CPC Class Codes: G01Q 20/04 Self-detecting probes, i.e. wherein the probe itself generates a signal representative of its position, e.g. piezoelectric gauge
• CPC Class Codes: G01Q 60/38 Probes, their manufacture, or their related instrumentation, e.g. holders
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

The invention is direct to a piezoelectric microcantilever for static contact and dynamic noncontact atomic force microscopy which may be carried out in solution. The piezoelectric microcantilever, which includes a piezoelectric layer and a non-piezoelectric layer is capable of self actuation and detection. The piezoelectric layer may be constructed from a lead magnesium niobate-lead titanate (Pb(Mg_1/3Nb_2/3)O₃)_0.65—(PbTiO₃)_0.35(PMN_0.65-PT_0.35) (PMN-PT), zirconate titanate (PZT)/SiO₂ or from any lead-free piezoelectric materials such as doped sodium-potassium niobate-lithium niobate. The piezoelectric layers of the microcantilevers may have dielectric constants of from 1600-3000 and thicknesses below 10 μm. Also disclosed are methods for fabricating microcantilever sensors and methods for atomic force microscopy employing the microcantilevers.

Claims

1. A method of atomic force microscopy comprising the steps of:

a) actuating a microcantilever force sensor located in contact with or proximate to an object, wherein the microcantilever force sensor comprises a piezoelectric layer and a non-piezoelectric layer, wherein said piezoelectric layer is selected from the group consisting of;

a piezoelectric film having a dielectric constant of more than about 1600 and a thickness of less than about 8 μ

m, and

a piezoelectric film having a thickness less than about 75μ

m and a piezoelectric coefficient −

d₃₁ of more than about 250 pm/V;

b) detecting a shift in resonance frequency using the microcantilever force sensor; and

c) determining a characteristic of the object from said detected resonance frequency shift.

2. The method of claim 1, wherein the characteristic of step (c) is selected from the group consisting of:

a Young'"'"'s modulus, a shear modulus, a lateral stiffness, an in-depth stiffness, a local height of the object and a topographical characteristic of the object.

3. The method of claim 1, wherein step (c) comprises generating an image of the object.

4. The method of claim 1, wherein the microcantilever force sensor further comprises a first electrode located between the piezoelectric layer and the non-piezoelectric layer and a second electrode located on a second side of said piezoelectric layer, and wherein step (a) comprises applying a voltage to the first electrode and wherein step (b) comprises detecting an induced piezoelectric voltage within the second electrode.

5. The method of claim 1, wherein step (a) comprises driving the microcantilever force sensor in a capacitive method by applying a voltage across the piezoelectric layer.

6. The method of claim 1, wherein the microcantilever force sensor comprises two piezoelectric layers and wherein the non-piezoelectric layer is positioned between the two piezoelectric layers.

7. The method of claim 6, wherein step (a) comprises applying a voltage to one of the two piezoelectric layers and wherein step (b) comprises detecting an induced piezoelectric voltage within a second piezoelectric layer.

8. The method of claim 1, further comprising the step of determining a displacement of a tip of the microcantilever force sensor.

9. The method of claim 1, wherein the microcantilever force sensor is operated in a static contact mode.

10. The method of claim 9, wherein a DC induced voltage is used to actuate the microcantilever force sensor in step (a).

11. The method of claim 1, wherein the microcantilever force sensor is operated in a dynamic non-contact mode.

12. The method of claim 11, wherein an AC induced voltage is used to actuate the microcantilever force sensor in step (a).

13. The method of claim 1, wherein a tip of the cantilever is tapped against the object while the microcantilever force sensor is actuated.

14. The method of claim 13, further comprising measuring the position of the cantilever tip and wherein step (c) comprises determining a local height of the object from the position of the cantilever tip.

15. The method of claim 14, wherein the microcantilever force sensor further comprises a sensing element selected from the group consisting of piezoelectric sensing element, piezo-resistive sensing element and magnetic sensing element, and wherein an output of the sensing element is used to determine the position of the cantilever tip.

16. The method of claim 13, wherein said actuating step comprises applying a voltage to induce a resonance frequency at or near a resonance frequency of the cantilever.

17. The method of claim 1, wherein the microcantilever force sensor is operated in a static contact mode and a dynamic non-contact mode.

18. The method of claim 1, wherein the microcantilever force sensor is operated in a DC mode, wherein a DC induced voltage is used to actuate the microcantilever force sensor in step (a) and wherein the microcantilever force sensor is operated in an AC mode, wherein an AC induced voltage is used to actuate the microcantilever force sensor in step (a).

19. A method of atomic force microscopy comprising the steps of:

a) actuating a microcantilever force sensor, wherein the microcantilever force sensor comprises a piezoelectric layer and a non-piezoelectric layer, wherein said piezoelectric layer is selected from the group consisting of;

a piezoelectric film having a dielectric constant of more than about 1600 and a thickness of less than about 8 μ

m, and

a piezoelectric film having a thickness less than about 75 μ

m and a piezoelectric coefficient −

d₃₁ of more than about 250 pm/V,

and wherein a tip of the cantilever is tapped against the object while the microcantilever force sensor is actuated;

b) measuring a position of the cantilever tip; and

c) determining a local height of the object from the position of the cantilever tip.

20. The method of claim 19, wherein the position of the cantilever tip is measured by directing a beam of light to a photodetector after reflecting the beam of light from a portion of the cantilever force sensor.