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Methods of fabricating silicon carbide devices having smooth channels

  • US 8,859,366 B2
  • Filed: 05/14/2012
  • Issued: 10/14/2014
  • Est. Priority Date: 05/24/2005
  • Status: Active Grant
First Claim
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1. A method of forming a silicon carbide power device, comprising:

  • providing an n-type silicon carbide region;

    providing a p-type silicon carbide region adjacent the n-type silicon carbide region; and

    providing an n

    silicon carbide region only on a channel region of the device that provides a reduction in surface roughness of the channel region of the silicon carbide power device;

    wherein the channel region of the silicon carbide power device includes at least portions of the n-type silicon carbide region, the p-type silicon carbide region and the n

    silicon carbide region.

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