Methods of fabricating silicon carbide devices having smooth channels
First Claim
1. A method of forming a silicon carbide power device, comprising:
- providing an n-type silicon carbide region;
providing a p-type silicon carbide region adjacent the n-type silicon carbide region; and
providing an n−
silicon carbide region only on a channel region of the device that provides a reduction in surface roughness of the channel region of the silicon carbide power device;
wherein the channel region of the silicon carbide power device includes at least portions of the n-type silicon carbide region, the p-type silicon carbide region and the n−
silicon carbide region.
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Abstract
Methods of forming silicon carbide power devices are provided. An n− silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n− silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well region. An n+ region of silicon carbide is provided on the buried region of p+ silicon carbide. A channel region of the power device is adjacent the buried region of p+ silicon carbide and the n+ region of silicon carbide. An n− region is provided on the channel region and a portion of the n− region is removed from the channel region so that a portion of the n− region remains on the channel region to provide a reduction in a surface roughness of the channel region.
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Citations
15 Claims
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1. A method of forming a silicon carbide power device, comprising:
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providing an n-type silicon carbide region; providing a p-type silicon carbide region adjacent the n-type silicon carbide region; and providing an n−
silicon carbide region only on a channel region of the device that provides a reduction in surface roughness of the channel region of the silicon carbide power device;wherein the channel region of the silicon carbide power device includes at least portions of the n-type silicon carbide region, the p-type silicon carbide region and the n−
silicon carbide region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming a silicon carbide power device, comprising:
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providing an n-type silicon carbide region; providing a p-type silicon carbide region adjacent the n-type silicon carbide region; and providing an n−
silicon carbide region that provides a reduction in surface roughness of a channel region of the silicon carbide power device;wherein the channel region of the silicon carbide power device includes at least portions of the n-type silicon carbide region, the p-type silicon carbide region and the n−
silicon carbide region;wherein the n-type silicon carbide region and p-type silicon carbide region include steps of up to several hundred angstroms in height on surfaces thereof; and wherein the n−
silicon carbide region is provided on the steps on the surfaces of the n-type silicon carbide region and p-type silicon carbide region, the presence of the n−
silicon carbide region on the steps providing the reduction in surface roughness of the channel region of the silicon carbide power device.
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Specification