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Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element

  • US 8,860,021 B2
  • Filed: 12/17/2012
  • Issued: 10/14/2014
  • Est. Priority Date: 12/23/2011
  • Status: Expired due to Fees
First Claim
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1. A semiconductor element comprising:

  • an oxide semiconductor layer comprising;

    a first low-resistance region;

    a second low-resistance region; and

    a channel formation region between the first low-resistance region and the second low-resistance region, wherein the channel formation region comprises a first side surface and a second side surface opposite to the first side surface;

    a first insulating film over the oxide semiconductor layer;

    a gate electrode facing a top surface, the first side surface, and the second side surface of the channel formation region with the first insulating film interposed therebetween;

    a second insulating film over the gate electrode;

    a first electrode over the second insulating film; and

    a second electrode over the second insulating film,wherein the first low-resistance region and the second low-resistance region each have a resistance lower than the channel formation region, andwherein the first electrode is in contact with the first low-resistance region through a first opening in the first insulating film and the second insulating film, andwherein the second electrode is in contact with the second low-resistance region through a second opening in the first insulating film and the second insulating film.

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