Photoelectric converison element, photoelectric conversion circuit, and display device

• US 8,860,029 B2
• Filed: 08/06/2013
• Issued: 10/14/2014
• Est. Priority Date: 12/10/2010
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nagi, Tsudoi, Dairiki, Koji
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US13/959,774
• Publication Number:
  US 20130313555A1
• Time in Patent Office: 434 Days
• Field of Search: 257/61, 257/352, 257/353
• US Class Current: 257/61
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/102 characterised by only one potential barrier
• CPC Class Codes: H01L 31/20 such devices or parts thereof comprising amorphous semiconductor materials
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A photoelectric conversion element including a first gate electrode, a first gate insulating layer, a crystalline semiconductor layer, an amorphous semiconductor layer, an impurity semiconductor layer, a source electrode and a drain electrode in contact with the impurity semiconductor layer, a second gate insulating layer covering a region between the source electrode and the drain electrode, and a second gate electrode over the second gate insulating layer. In the photoelectric conversion element, a light-receiving portion is provided in the region between the source electrode and the drain electrode, the first gate electrode includes a light-shielding material and overlaps with the entire surface of the crystalline semiconductor layer and the amorphous semiconductor layer, the second gate electrode includes a light-transmitting material and overlaps with the light-receiving portion, and the first gate electrode is electrically connected to the source electrode or the drain electrode is provided.

Claims

1. A photoelectric conversion element comprising:

a first gate electrode;

a first gate insulating layer over the first gate electrode;

a crystalline semiconductor layer provided over the first gate insulating layer;

amorphous semiconductor layers provided apart from each other, each of the amorphous semiconductor layers being on and in contact with the crystalline semiconductor layer;

impurity semiconductor layers provided over the amorphous semiconductor layers, respectively;

a source electrode and a drain electrode, each provided in contact with one of the impurity semiconductor layers;

a second gate insulating layer provided to cover a portion of the crystalline semiconductor layer, where the amorphous semiconductor layers are not provided; and

a second gate electrode provided over the second gate insulating layer,

wherein a light-receiving portion is provided in the portion of the crystalline semiconductor layer, where the amorphous semiconductor layers are not provided,

wherein the first gate electrode includes a light-shielding material and is provided to entirely overlap with the crystalline semiconductor layer and the amorphous semiconductor layers,

wherein the second gate electrode includes a light-transmitting material and is provided to overlap with the light-receiving portion, and

wherein the first gate electrode is electrically connected to one of the source electrode and the drain electrode.

2. The photoelectric conversion element according claim 1, wherein the impurity semiconductor layers are not provided in the portion of the crystalline semiconductor layer.

3. The photoelectric conversion element according claim 1, wherein the crystalline semiconductor layer comprises microcrystalline semiconductor.

4. The photoelectric conversion element according claim 1, wherein the second gate electrode is electrically connected to one of the source electrode and the drain electrode.

5. The photoelectric conversion element according claim 1, wherein the second gate electrode is electrically connected to the first gate electrode.

6. The photoelectric conversion element according claim 1, wherein an interface region between the crystalline semiconductor layer and one of the amorphous semiconductor layers has a conical or pyramidal microcrystalline semiconductor region.

7. The photoelectric conversion element according claim 6, wherein the interface region contains an NH group or an NH₂ group.

8. A photoelectric conversion circuit comprising:

the photoelectric conversion element according to claim 1, wherein the first gate electrode is electrically connected to a reset line;

a storage capacitor in which the other of the source electrode and the drain electrode of the photoelectric conversion element is electrically connected to a first electrode and a common potential line is electrically connected to a second electrode;

a first thin film transistor in which a gate is electrically connected to the other of the source electrode and the drain electrode of the photoelectric conversion element and one of a source and a drain of the first thin film transistor is electrically connected to a power supply potential line; and

a second thin film transistor in which a gate is electrically connected to a select line, one of a source and a drain of the second thin film transistor is electrically connected to the other of the source and the drain of the first thin film transistor, and the other of the source and the drain of the second thin film transistor is electrically connected to a reading line.

9. A display device including the photoelectric conversion circuit according to claim 8.

10. A photoelectric conversion element comprising:

a first conductive layer over a substrate;

a first insulating layer over the first conductive layer;

a crystalline semiconductor layer over the first insulating layer;

first and second amorphous semiconductor layers on first and second portions of the crystalline semiconductor layer, the first and second portions provided apart from each other;

first and second impurity semiconductor layers on the first and second amorphous semiconductor layers, respectively;

second conductive layers on the first and second impurity semiconductor layers, one of the second conductive layers being in contact with the first insulating layer;

a second insulating layer over the second conductive layers and being in contact with a third portion of the crystalline semiconductor layer, the third portion provided between the first and second portions of the crystalline semiconductor layer; and

a third conductive layer over the second insulating layer and the third portion of the crystalline semiconductor layer.

11. The photoelectric conversion element according to claim 10, wherein the crystalline semiconductor layer comprises microcrystalline semiconductor.

12. The photoelectric conversion element according claim 10 wherein the third conductive layer is electrically connected to one of the second conductive layers.

13. The photoelectric conversion element according claim 10, wherein the third conductive layer is electrically connected to the first conductive layer.

14. The photoelectric conversion element according to claim 10, wherein interface regions between the crystalline semiconductor layer and the first and second amorphous semiconductor layers have conical or pyramidal microcrystalline semiconductor regions.

15. The photoelectric conversion element according claim 14, wherein each of the interface regions contains an NH group or an NH₂ group.