Optoelectronic semiconductor device

• US 8,860,065 B2
• Filed: 01/04/2011
• Issued: 10/14/2014
• Est. Priority Date: 01/18/2005
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Lu, Chih-Chiang, Peng, Wei-Chih, San, Shiau-Huei, Hsieh, Min-Hsun
• Primary Examiner(s): Fahmy, Wael
• Assistant Examiner(s): SALERNO, SARAH KATE
• Application Number:
  US12/984,169
• Publication Number:
  US 20110095325A1
• Time in Patent Office: 1,379 Days
• Field of Search: 257/81, 257/99
• US Class Current: 257/99
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An embodiment of the invention discloses an optoelectronic semiconductor device. The optoelectronic semiconductor comprises a unit having a plurality of electrical connectors with top surfaces; an insulating material surrounding each of the plurality of electrical connectors, wherein each of the top surfaces are exposed through the insulating material; a semiconductor system, having a side surface directly covered by the insulation material, electrically connected to the plurality of electrical connectors and being narrower in width than both of the unit and the insulating material; an electrode formed on the semiconductor system at a position not corresponding to the plurality of electrical connectors; and a layer provided on the semiconductor system at a side opposite to the electrode and configured to laterally exceed outside more than one outermost boundary of the plurality of electrical connectors.

Claims

1. An optoelectronic semiconductor device, comprising:

a unit having a plurality of electrical connectors with top surfaces;

an insulating material surrounding each of the plurality of electrical connectors and exposing each of the top surfaces;

a semiconductor system, electrically connected to the plurality of electrical connectors, having a side surface directly covered by the insulating material and being narrower in width than both of the unit and the insulating material;

an electrode formed on the semiconductor system at a position not corresponding to the plurality of electrical connectors; and

a layer provided on the semiconductor system at a side opposite to the electrode and arrange to laterally extend beyond more than one outermost boundary of the plurality of electrical connectors.

2. The optoelectronic semiconductor device of claim 1, further comprising:

a reflector formed between the insulating material and the semiconductor system.

3. The optoelectronic semiconductor device of claim 1, wherein at least one of the top surfaces does not extend beyond a side surface of the semiconductor system.

4. The optoelectronic semiconductor device of claim 1, wherein at least one of the top surfaces does not overlap the insulating material.

5. The optoelectronic semiconductor device of claim 1, further comprising:

an electrical conductor electrically supporting the semiconductor system.

6. The optoelectronic semiconductor device of claim 1, further comprising:

a wavelength converting material formed on the semiconductor system.

7. The optoelectronic semiconductor device of claim 1, wherein the plurality of electrical connectors are arranged in a matrix.

8. The optoelectronic semiconductor device of claim 1, wherein the insulating material has a portion arranged between the unit and the semiconductor system, and located at a position corresponding to the electrode.

9. The optoelectronic semiconductor device of claim 1, wherein the semiconductor system comprises:

at least two semiconductor layers having different electric properties, polarities, or dopants; and

a light-emitting layer between the two semiconductor layers.

20. The optoelectronic semiconductor device of claim 1, wherein the electrode does not directly contact the plurality of the electrical connectors.

10. An optoelectronic semiconductor device, comprising:

a plurality of electrical connectors having outermost boundaries;

an electrical conductor arranged to laterally extend beyond more than one of the outermost boundaries;

an insulating material having openings arranged to expose the plurality of electrical connectors;

a semiconductor system, electrically connected to the plurality of electrical connectors, having a side surface directly covered by the insulating material and being narrower in width than both of the electrical conductor and the insulating material; and

an electrode formed on the semiconductor system at a position not corresponding to the electrical conductor.

11. The optoelectronic semiconductor device of claim 10, wherein the electrode is excluded from directly covering the plurality of electrical connectors.

12. The optoelectronic semiconductor device of claim 10, further comprising:

a wavelength converting material formed on the semiconductor system.

13. The optoelectronic semiconductor device of claim 10, further comprising:

a reflector formed between the insulating material and the semiconductor system.

14. The optoelectronic semiconductor device of claim 10, wherein the insulating material has a portion arranged between the electrical conductor and the semiconductor system, and located at a position corresponding to the electrode.

15. An optoelectronic semiconductor device, comprising:

a plurality of electrical connectors having outermost boundaries;

an electrical conductor arranged to laterally extend beyond more than one of the outermost boundaries;

an insulating material having openings arranged to expose the plurality of electrical connectors;

a light-emitting layer, electrically connected to the plurality of electrical connectors, having a side surface directly covered by the insulating material and being narrower in width than both of the electrical conductor and the insulating material; and

an electrode formed on the light-emitting layer at a position not corresponding to the electrical conductor and at a side opposite to the electrical conductor.

16. The optoelectronic semiconductor device of claim 15, wherein the electrode is excluded from directly covering the plurality of electrical connectors.

17. The optoelectronic semiconductor device of claim 15, further comprising:

a reflector formed between the insulating material and the light-emitting layer.

18. The optoelectronic semiconductor device of claim 15, wherein the plurality of electrical connectors are arranged in a matrix.

19. The optoelectronic semiconductor device of claim 15, wherein the insulating material has a portion arranged between the electrical conductor and the semiconductor system, and located at a position corresponding to the electrode.