High electron mobility transistor and method of manufacturing the same
First Claim
1. A high electron mobility transistor comprising:
- a first channel layer;
a second channel layer on the first channel layer,the second channel layer forming a PN junction with the first channel layer;
a channel supply layer on the second channel layer;
a drain electrode spaced apart from the first channel layer,the drain electrode contacting at least one of the second channel layer and the channel supply layer;
a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer; and
a gate electrode unit between the source electrode and the drain electrode,the gate electrode unit having a normally-off structure.
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Abstract
According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer.
19 Citations
21 Claims
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1. A high electron mobility transistor comprising:
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a first channel layer; a second channel layer on the first channel layer, the second channel layer forming a PN junction with the first channel layer; a channel supply layer on the second channel layer; a drain electrode spaced apart from the first channel layer, the drain electrode contacting at least one of the second channel layer and the channel supply layer; a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer; and a gate electrode unit between the source electrode and the drain electrode, the gate electrode unit having a normally-off structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of manufacturing a high electron mobility transistor, the method comprising:
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forming a first channel layer; forming a second channel layer on the first channel layer, the first channel layer and the second channel layer forming a PN junction with each other; forming a channel supply layer on the second channel layer; forming a source electrode accommodation portion defined by the second channel layer and the channel supply layer, the source electrode accommodation portion exposing a part of the first channel layer; forming a source electrode in the source electrode accommodation portion, the source electrode contacting the first channel layer; forming a drain electrode that is spaced apart from the first channel layer and contacts at least one of the second channel layer and the channel supply layer; and forming a gate electrode unit between the source electrode and the drain electrode, the gate electrode unit having a normally-off structure. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification