ESD protection element
First Claim
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1. An ESD (Electrostatic Discharge) protection element comprising:
- a bipolar transistor comprising;
a collector diffusion layer connected with a first terminal;
a base diffusion layer; and
an emitter diffusion layer;
a first wire connected to the emitter diffusion layer and the base diffusion layer;
a second wire connected to the emitter diffusion layer and the base diffusion layer;
a first current control resistance connected to a second terminal, and connected to the first wire by a first contact;
a second current control resistance connected to the second terminal, and connected to the second wire by a second contact,wherein the collector diffusion layer and the emitter diffusion layer are each arranged in a base width direction,the first and second wires and the first and second current control resistances are each arranged in a direction that is perpendicular to the base width direction, andwherein current flowing out to a power supply voltage is distributed to flow through the first and second current control resistances in order to reduce current concentration in a breakdown path.
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Abstract
In an aspect of the present invention, an ESD (Electrostatic Discharge) protection element includes a bipolar transistor comprising a collector diffusion layer connected with a first terminal and an emitter diffusion layer; and current control resistances provided for a plurality of current paths from a second terminal to the collector diffusion layer through the emitter diffusion layer, respectively. The bipolar transistor further includes a base diffusion region connected with the second terminal through a first resistance which is different from the current control resistances.
60 Citations
30 Claims
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1. An ESD (Electrostatic Discharge) protection element comprising:
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a bipolar transistor comprising; a collector diffusion layer connected with a first terminal; a base diffusion layer; and an emitter diffusion layer; a first wire connected to the emitter diffusion layer and the base diffusion layer; a second wire connected to the emitter diffusion layer and the base diffusion layer; a first current control resistance connected to a second terminal, and connected to the first wire by a first contact; a second current control resistance connected to the second terminal, and connected to the second wire by a second contact, wherein the collector diffusion layer and the emitter diffusion layer are each arranged in a base width direction, the first and second wires and the first and second current control resistances are each arranged in a direction that is perpendicular to the base width direction, and wherein current flowing out to a power supply voltage is distributed to flow through the first and second current control resistances in order to reduce current concentration in a breakdown path. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 28, 29)
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18. An ESD (Electrostatic Discharge) protection element comprising:
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a bipolar transistor comprising; a collector diffusion region connected with a first terminal; a base diffusion region; and an emitter diffusion region; a first wire connected to the emitter diffusion region and the base diffusion region; a second wire connected to the emitter diffusion region and the base diffusion region; a first current control resistance connected to a second terminal, and connected to the first wire by a first contact; a second current control resistance connected to the second terminal, and connected to the second wire by a second contact, wherein the first and second wires each provide a separate current path from the second terminal to the collector diffusion layer through the emitter layer, and wherein current flowing out to a power supply voltage is distributed to flow through the first and second control resistances in order to reduce current concentration in a breakdown path. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27)
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30. An ESD (Electrostatic Discharge) protection element comprising:
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a bipolar transistor comprising; a collector diffusion layer connected with a first terminal; a base diffusion layer; and an emitter diffusion layer; a plurality of wires each connected to the emitter diffusion layer and the base diffusion layer; and a plurality of current control resistances each of which is connected to a second terminal and a respective wire of the plurality of wires, wherein the collector diffusion layer and the emitter diffusion layer are each arranged in a base width direction, the plurality of wires and the plurality of current control resistances are each arranged in a direction that is perpendicular to the base width direction, and wherein current flowing out to a power supply voltage is distributed to flow through the plurality of current control resistances in order to reduce current concentration in breakdown path.
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Specification