Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM

• US 8,860,156 B2
• Filed: 09/11/2012
• Issued: 10/14/2014
• Est. Priority Date: 09/11/2012
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Headway Technologies Incorporated (TDK Corporation)
• Inventors: Beach, Robert, Jan, Guenole, Wang, Yu-Jen, Tong, Ru-Ying
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US13/609,780
• Publication Number:
  US 20140070341A1
• Time in Patent Office: 763 Days
• Field of Search: 257/421, 365/171, 365/173
• US Class Current: 257/421
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/123 having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H01F 41/307 insulating or semiconductive spacer
• CPC Class Codes: H01L 29/82 controllable by variation of the magnetic field applied to the device
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)₄, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.

Claims

1. A synthetic antiferromagnetic (SAF) structure, comprising:

(a) an AP2 reference layer with intrinsic perpendicular magnetic anisotropy;

(b) a CoFeB layer wherein perpendicular magnetic anisotropy is established by antiferromagnetic coupling with the AP2 reference layer through an antiferromagnetic (AF) coupling layer formed between the AP2 reference layer and CoFeB layer; and

(c) the AF coupling layer made of a non-magnetic material to give an AP2/AF coupling/CoFeB configuration or an CoFeB/AF coupling/AP2 configuration.

2. The SAF structure of claim 1 wherein the AP2 layer is comprised of an (A1/A2)_n laminate where the lamination number “

n”

is less than 6, A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V.

3. The SAF structure of claim 1 wherein the AP2 layer is a L10 ordered alloy of the form MT wherein M is Rh, Pd, Pt, Ir, or an alloy thereof, and T is Fe, Co, Ni or alloy thereof, or the AP2 layer is made of a rare earth-transition metal alloy that is TbCo, TbFeCo, or GdFeCo.

4. The SAF structure of claim 1 wherein the AP2 layer is comprised of a (A1/A2)_n laminate where n is the lamination number, A1 is one of Co, CoFe, or an alloy thereof, A2 is one of Rh, Ir, Ru, Os, Mo, or an alloy thereof and A2 provides ferromagnetic or antiferromagnetic coupling between neighboring A1 layers.

5. The SAF structure of claim 1 wherein the CoFeB layer has a thickness from about 6 to 12 Angstroms.

6. The SAF structure of claim 1 wherein the AF coupling layer is Ru, Ir, Rh, Os, Mo, V, or an alloy thereof.

7. The SAF structure of claim 1 wherein the SAF structure serves as a reference layer in a magnetic tunnel junction (MTJ) and has the AP2/AF coupling/CoFeB configuration in a bottom spin valve MTJ, or the CoFeB/AF coupling/AP2 configuration in a top spin valve MTJ.

8. The SAF structure of claim 1 wherein the SAF structure is a reference layer in a bottom spin valve MTJ and is formed on a seed layer made of TaN/Mg/X, Ta/X, or Ta/Mg/X where X is a growth enhancement layer made of NiCr or NiFeCr.

9. The SAF structure of claim 8 wherein the MTJ is further comprised of a MgO tunnel barrier, free layer, and cap layer that are sequentially formed on a top surface of the CoFeB layer, and the MgO tunnel barrier induces additional PMA in the CoFeB layer.

10. The SAF structure of claim 9 wherein the free layer has perpendicular magnetic anisotropy.

11. The SAF structure of claim 1 further comprised of a first Co or Co alloy dusting layer formed between the AF coupling layer and the AP2 reference layer, and a second Co or Co alloy dusting layer formed between the AF coupling layer and CoFeB layer.

12. The SAF structure of claim 11 wherein a combined thickness of the second Co or Co alloy dusting layer and the CoFeB layer is from about 7 to 15 Angstroms.

13. The SAF structure of claim 11 further comprised of a non-magnetic insertion layer made of Ta, Al, Cu, Zr, Hf, Nb, Mg, or Mo formed between the second Co or Co dusting layer and the CoFeB layer.