Semiconductor device having diode characteristic
First Claim
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1. A semiconductor device comprising:
- a first region formed of semiconductor;
a second region formed of semiconductor which borders the first region;
an electrode formed to be in ohmic-connection with the first region; and
a third region formed to sandwich the first region with the second region, wherein a first potential difference that is produced between the first and the second regions in a thermal equilibrium state is based on a second potential difference between the third region and the first region.
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Abstract
According to one embodiment, a semiconductor device is provided. The semiconductor device has a first region formed of semiconductor and a second region formed of semiconductor which borders the first region. An electrode is formed to be in ohmic-connection with the first region. A third region is formed to sandwich the first region. A first potential difference is produced between the first and the second regions in a thermal equilibrium state, according to a second potential difference between the third region and the first region.
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11 Claims
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1. A semiconductor device comprising:
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a first region formed of semiconductor; a second region formed of semiconductor which borders the first region; an electrode formed to be in ohmic-connection with the first region; and a third region formed to sandwich the first region with the second region, wherein a first potential difference that is produced between the first and the second regions in a thermal equilibrium state is based on a second potential difference between the third region and the first region. - View Dependent Claims (2)
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3. A semiconductor device comprising:
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an anode electrode and a cathode electrode arranged with an interval between the electrodes; a first-conductivity type cathode layer having a first impurity concentration, the cathode layer being formed on the cathode electrode; a first-conductivity type drift layer formed on the cathode layer and having a second impurity concentration that is lower than the first impurity concentration; a plurality of trenches formed at intervals in a portion of the drift layer on an anode electrode side; a plurality of semiconductor regions, each semiconductor region extending between adjacent trenches; an insulating film formed on each inner wall of the trenches; a buried electrode provided in each of the trenches on the insulating film; and a plurality of first-conductivity type layers and a plurality of second-conductivity type layers, the first-conductivity type layers alternating with the second-conductivity type layers provided between each semiconductor region and the anode electrode and contacting the semiconductor region, the first-conductivity type layers having a third impurity concentration that is higher than the second impurity concentration, the second-conductivity type layers having a fourth impurity concentration that is higher than the second impurity concentration, wherein a first potential difference that is produced between the first-conductivity type drift layer and the plurality of semiconductor regions in a thermal equilibrium state is based on a second potential difference between the first-conductivity type drift layer and a region comprising the plurality of first-conductivity type layers and the plurality of second-conductivity type layers. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11)
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Specification