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Supply voltage generating circuit

  • US 8,860,499 B2
  • Filed: 06/07/2013
  • Issued: 10/14/2014
  • Est. Priority Date: 03/27/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • first and second voltage terminals to be respectively supplied with first and second voltages different from each other;

    an internal voltage node;

    a switching circuit coupled between the first and second voltage terminals and the internal voltage node, the switching circuit to take either one of a first switching state in which the first voltage terminal and the internal voltage node are connected and a second switching state in which the second voltage terminal and the internal voltage node are connected; and

    a voltage booster circuit including a voltage output node and first and second boosting circuits each including a capacitor and each coupled to the internal voltage node, the voltage booster circuit being configured such that the first and second voltage boosting circuits are coupled in series to the voltage output node when the switching circuit takes the first switching state and that the first boosting circuit is coupled to the voltage output node and the second boosting circuit is disconnected from each of the first boosting circuit and the voltage output node when the switching circuit takes the second switching state, andat least when the switching circuit takes a switching state, the capacitor of the first boosting circuit is coupled to the voltage output node and the capacitor of the second boosting circuit is disconnected from each of the voltage output node and the capacitor of the first boosting circuit.

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