Tunable Bragg stack

• US 8,861,072 B2
• Filed: 05/29/2009
• Issued: 10/14/2014
• Est. Priority Date: 05/30/2008
• Status: Active Grant

• Current Assignee: Opalux Incorporated
• Original Assignee: Opalux Incorporated
• Inventors: Arsenault, Andre, Ozin, Geoffrey Alan, Puzzo, Daniel Patrick
• Primary Examiner(s): Ben, Loha
• Application Number:
  US12/995,338
• Publication Number:
  US 20110164308A1
• Time in Patent Office: 1,964 Days
• Field of Search: 359/318, 359/322, 359/578, 359/580, 359/586, 359/634, 204/242, 205/109, 250/201.9, 250/338.1, 430/321, 436/512, 436/524
• US Class Current: 359/322
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/009 Thermal properties
• CPC Class Codes: G02F 1/0128 based on electro-mechanical, magneto-mechanical, elasto-optic effects
• CPC Class Codes: G02F 1/0147 based on thermo-optic effects G02F1/132 takes precedence
• CPC Class Codes: G02F 1/03 based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect G02F1/061 takes precedence
• CPC Class Codes: G02F 1/15165 Polymers
• CPC Class Codes: G02F 1/21 by interference
• CPC Class Codes: G02F 2001/1518 Ferrocene compounds
• CPC Class Codes: G02F 2201/346 distributed (Bragg) reflector
• CPC Class Codes: G02F 2202/32 Photonic crystals
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01S 3/08059 Constructional details of the reflector, e.g. shape mirrors in general G02B5/08; mountings for mirrors G02B7/18
• CPC Class Codes: Y10S 977/773 Nanoparticle, i.e. structure having three dimensions of 100 nm or less

Abstract

A tunable photonic crystal device comprising: alternating layers of a first material and a second material, the alternating layers comprising a responsive material, the responsive material being responsive to an external stimulus, the alternating layers having a periodic difference in refractive indices giving rise to a first reflected wavelength; wherein, in response to the external stimulus, a change in the responsive material results in a reflected wavelength of the device shifting from the first reflected wavelength to a second reflected wavelength.

Claims

1. A tunable photonic crystal device comprising:

alternating layers of a first material and a second material, the alternating layers each being a fully continuous layer and comprising a responsive material, the responsive material being responsive to an external stimulus, the alternating layers having a periodic difference in refractive indices giving rise to a first reflected wavelength;

wherein, in response to the external stimulus, a change in the responsive material results in a reflected wavelength of the device shifting from the first reflected wavelength to a second reflected wavelength.

2. The device of claim 1 wherein the change in the responsive material is an expansion or a contraction.

3. The device of claim 1 wherein at least one of the first material and the second material comprises nanoparticle layers or microparticle layers.

4. The device of claim 1 wherein at least one of the first material and the second material comprises a nanoparticle or microparticle having a core and a shell of differing materials.

5. The device of claim 1 wherein the external stimulus is selected from the group consisting of:

mechanical stimulus, chemical stimulus, electrical stimulus, thermal stimulus, light stimulus, magnetic stimulus, and combinations thereof.

6. The device of claim 5 wherein the external stimulus is an electrical stimulus and the responsive material is a metallopolymer having a redox response to the electrical stimulus or a piezoelectric material that exhibits a change in dimensions in response to the electrical stimulus.

7. The device of claim 5 wherein the external stimulus is a magnetic stimulus and the responsive material is magnetically responsive material.

8. The device of claim 5 wherein the external stimulus is a mechanical stimulus and the responsive material is a mechanically expandable/compressible material.

9. The device of claim 1 wherein the responsive material is a polymer.

10. The device of claim 9 wherein the polymer is selected from the group consisting of:

polyferrocenylsilanes, polythiophenes, polypyrroles, polyanilines, polyphenylene vinylenes, polyacetylenes, polyfluorenes, polyphenylenevinyidenes, polyacetylenes, conducting polymers, conjugated polymers, metallopolymers, copolymers incorporating such polymer types, polyvinylidene difluoride, and combinations thereof.

11. The device of claim 10 wherein the polymer contains cross-links that are electrically conducting or electrically insulating.

12. The device of claim 1 wherein the polymer comprises a redox active group.

13. The device of claim 1 wherein at least one of the first material and the second material is a mixture of two or more different materials.

14. The device of claim 13 wherein the mixture comprises a magnetically responsive material and a reversibly compressible material.

15. A tunable photonic crystal electrochemical cell comprising:

an electrically conductive working electrode and an electrically conductive counter electrode, the working and counter electrodes being spaced apart;

a tunable photonic crystal device between the working and counter electrodes, in contact with at least one of the working and counter electrodes, the photonic crystal device comprising;

alternating layers of a first material and a second material, the alternating layers comprising a responsive material, the responsive material being responsive to an external stimulus, the alternating layers having a periodic difference in refractive indices giving rise to a first reflected wavelength;

wherein, in response to the external stimulus, a change in the responsive material results in a reflected wavelength of the device shifting from the first reflected wavelength to a second reflected wavelength; and

a conductive solution provided between the working and counter electrodes, the solution being in electrical communication with both the working and counter electrodes and the device;

the cell being adapted to be connected to an electrical source for applying an electrical potential between the working electrode and the counter electrode to provide an electrical stimulus as the external stimulus to the device.

16. The cell of claim 15 wherein at least one of the working and counter electrodes, or the solution has a charge-storage material.

17. The cell of claim 16 wherein the charge-storage material is selected from the group consisting of:

conductive oxides, conductive ceramics, metals, carbons, conducting polymers, redox-active polymers, nanoparticles, redox-active small molecules, and combinations thereof.

18. The cell of claim 15 further comprising a spacer between the working electrode and the counter electrode.

19. The cell of claim 18 wherein the spacer is a non-conductive material selected from the group consisting of thermoplastic polymer films, adhesive-coated plastic films, adhesives, epoxies, and spacer beads mixed into an adhesive or an epoxy.

20. A method of manufacturing a tunable photonic crystal device comprising the steps of:

providing a substrate;

fabricating alternating layers of a first material and a second material on the substrate, the alternating layers having a periodic difference in refractive indices giving rise to a first reflected wavelength; and

embedding the alternating layers the alternating layers each being a fully continuous layer, with a responsive material, the responsive material having a change in response to an external stimulus, resulting in a reflected wavelength of the device shifting from the first reflected wavelength to a second reflected wavelength.