SRAM cell layout structure and devices therefrom
First Claim
1. A computer-implemented method for designing an integrated circuit, comprising:
- obtaining design layout data for a base integrated circuit with at least one SRAM cell to be converted to utilize enhanced body effect (EBE) transistors comprising a substantially undoped channel layer and a highly doped screening region beneath the channel layer; and
performing, via a processor, the steps of;
dividing NMOS active area patterns in the design layout into at least one enhanced body effect (EBE) NMOS active area layout with the NMOS active area patterns for the at least one SRAM cell and at least one non-EBE NMOS active layout with other ones of the NMOS active area patterns;
dividing PMOS active area patterns in the design layout into at least one EBE PMOS active area layout with the PMOS active area patterns for the at least one SRAM cell and at least one non-EBE PMOS active layout with other ones of the PMOS active area patterns;
adjusting a size of the NMOS active area patterns in the EBE NMOS active area layout to reduce a width of at least pull-down devices in the at least one SRAM cell; and
altering a gate layer layout in the design layout data such that a length of pull-up devices in the at least one SRAM and a length of the pull-down devices are substantially equal.
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Accused Products
Abstract
A method for modifying a design of an integrated circuit includes obtaining design layout data for the integrated circuit and selecting at least one SRAM cell in the integrated circuit to utilize enhanced body effect (EBE) transistors comprising a substantially undoped channel layer and a highly doped screening region beneath the channel layer. The method also includes extracting, from the design layout, NMOS active area patterns and PMOS active area patterns associated with the SRAM cell to define an EBE NMOS active area layout and a EBE PMOS active area layout. The method further includes adjusting the EBE NMOS active area layout to reduce a width of at least pull-down devices in the SRAM cell and altering a gate layer layout in the design layout data such that a length of pull-up devices in the at least one SRAM and a length of the pull-down devices are substantially equal.
502 Citations
6 Claims
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1. A computer-implemented method for designing an integrated circuit, comprising:
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obtaining design layout data for a base integrated circuit with at least one SRAM cell to be converted to utilize enhanced body effect (EBE) transistors comprising a substantially undoped channel layer and a highly doped screening region beneath the channel layer; and performing, via a processor, the steps of; dividing NMOS active area patterns in the design layout into at least one enhanced body effect (EBE) NMOS active area layout with the NMOS active area patterns for the at least one SRAM cell and at least one non-EBE NMOS active layout with other ones of the NMOS active area patterns; dividing PMOS active area patterns in the design layout into at least one EBE PMOS active area layout with the PMOS active area patterns for the at least one SRAM cell and at least one non-EBE PMOS active layout with other ones of the PMOS active area patterns; adjusting a size of the NMOS active area patterns in the EBE NMOS active area layout to reduce a width of at least pull-down devices in the at least one SRAM cell; and altering a gate layer layout in the design layout data such that a length of pull-up devices in the at least one SRAM and a length of the pull-down devices are substantially equal. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification