Method for manufacturing semiconductor device

• US 8,865,534 B2
• Filed: 04/21/2011
• Issued: 10/21/2014
• Est. Priority Date: 04/23/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Roman, Angel
• Application Number:
  US13/091,184
• Publication Number:
  US 20110263082A1
• Time in Patent Office: 1,279 Days
• Field of Search: 438/158, 257/E21.476, 257/E21.561
• US Class Current: 438/158
• CPC Class Codes: H01L 21/02321 introduction of substances into an already existing insulating layer H01L21/02227 and subgroups take precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

In a manufacturing process of a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation through heat treatment and oxygen doping treatment are performed. A transistor including an oxide semiconductor film subjected to dehydration or dehydrogenation through heat treatment and oxygen doping treatment can be a highly reliable transistor having stable electric characteristics in which the amount of change in threshold voltage of the transistor between before and after the bias-temperature stress (BT) test can be reduced.

Claims

1. A method for manufacturing a semiconductor device, comprising:

forming a gate electrode layer;

forming a gate insulating film over the gate electrode layer;

forming an oxide semiconductor film over the gate insulating film so as to overlap with the gate electrode layer;

performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film;

forming source and drain electrode layers so that they are electrically connected to the oxide semiconductor film;

forming an insulating film over the oxide semiconductor film and the source and drain electrode layers so as to be in contact with the oxide semiconductor film; and

performing oxygen doping treatment on the insulating film so that an oxygen atom is supplied to the insulating film.

2. The method for manufacturing the semiconductor device, according to claim 1, wherein an insulating film containing a constituent element of the oxide semiconductor film is formed as the gate insulating film or the insulating film.

3. The method for manufacturing the semiconductor device, according to claim 1, wherein an insulating film containing a constituent element of the oxide semiconductor film and a film containing a constituent element different from that of the insulating film containing the constituent element of the oxide semiconductor film are formed as the gate insulating film or the insulating film.

4. The method for manufacturing the semiconductor device, according to claim 1, wherein an insulating film containing a gallium oxide is formed as the gate insulating film or the insulating film.

5. The method for manufacturing the semiconductor device, according to claim 1, wherein an insulating film containing a gallium oxide and a film containing a material different from the gallium oxide are formed as the gate insulating film or the insulating film.

6. The method for manufacturing the semiconductor device, according to claim 1, wherein an insulating film containing an aluminum oxide is formed as the gate insulating film or the insulating film.

7. The method for manufacturing the semiconductor device, according to claim 1, further comprising forming an inorganic insulating film over the insulating film, wherein the inorganic insulating film is a silicon nitride film or an aluminum oxide film.

23. The method for manufacturing the semiconductor device, according to claim 1, wherein oxygen which is added by oxygen doping treatment exists between lattices of an oxide semiconductor in the oxide semiconductor film.

25. The method for manufacturing the semiconductor device, according to claim 1, wherein the insulating film is a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum oxynitride film, or a gallium oxide film.

27. The method for manufacturing the semiconductor device, according to claim 1, wherein the gate insulating film is formed to have a single-layer or layered structure using any of a silicon oxide, a silicon nitride, a silicon oxynitride, a silicon nitride oxide, an aluminum oxide, an aluminum nitride, an aluminum oxynitride, an aluminum nitride oxide, a hafnium oxide, and a gallium oxide.

8. A method for manufacturing a semiconductor device, comprising:

forming a gate electrode layer;

forming a gate insulating film over the gate electrode layer;

forming an oxide semiconductor film over the gate insulating film so as to overlap with the gate electrode layer;

performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film;

forming source and drain electrode layers so that they are electrically connected to the oxide semiconductor film;

forming an insulating film over the oxide semiconductor film and the source and drain electrode layers so as to be in contact with the oxide semiconductor film;

performing oxygen doping treatment on the insulating film so that an oxygen atom is supplied to the insulating film; and

performing heat treatment, after performing the oxygen doping treatment.

9. The method for manufacturing the semiconductor device, according to claim 8, wherein an insulating film containing a constituent element of the oxide semiconductor film is formed as the gate insulating film or the insulating film.

10. The method for manufacturing the semiconductor device, according to claim 8, wherein an insulating film containing a constituent element of the oxide semiconductor film and a film containing a constituent element different from that of the insulating film containing the constituent element of the oxide semiconductor film are formed as the gate insulating film or the insulating film.

11. The method for manufacturing the semiconductor device, according to claim 8, wherein an insulating film containing a gallium oxide is formed as the gate insulating film or the insulating film.

12. The method for manufacturing the semiconductor device, according to claim 8, wherein an insulating film containing a gallium oxide and a film containing a material different from the gallium oxide are formed as the gate insulating film or the insulating film.

13. The method for manufacturing the semiconductor device, according to claim 8, wherein an insulating film containing an aluminum oxide is formed as the gate insulating film or the insulating film.

14. The method for manufacturing the semiconductor device, according to claim 8, further comprising forming an inorganic insulating film over the insulating film, wherein the inorganic insulating film is a silicon nitride film or an aluminum oxide film.

24. The method for manufacturing the semiconductor device, according to claim 8, wherein oxygen which is added by oxygen doping treatment exists between lattices of an oxide semiconductor in the oxide semiconductor film.

26. The method for manufacturing the semiconductor device, according to claim 8, wherein the insulating film is a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum oxynitride film, or a gallium oxide film.

28. The method for manufacturing the semiconductor device, according to claim 8, wherein the gate insulating film is formed to have a single-layer or layered structure using any of a silicon oxide, a silicon nitride, a silicon oxynitride, a silicon nitride oxide, an aluminum oxide, an aluminum nitride, an aluminum oxynitride, an aluminum nitride oxide, a hafnium oxide, and a gallium oxide.

15. A method for manufacturing a semiconductor device, comprising:

forming a gate electrode layer;

forming a gate insulating film over the gate electrode layer;

forming an oxide semiconductor film over the gate insulating film so as to overlap with the gate electrode layer;

performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film;

forming source and drain electrode layers so that they are electrically connected to the oxide semiconductor film;

forming an insulating film over the oxide semiconductor film and the source and drain electrode layers so as to be in contact with the oxide semiconductor film; and

performing oxygen doping treatment on the insulating film so that an oxygen atom is supplied to the insulating film, whereby an oxygen content in the insulating film is greater than a stoichiometric proportion of the insulating film.

16. The method for manufacturing the semiconductor device, according to claim 15, wherein an insulating film containing a constituent element of the oxide semiconductor film is formed as the gate insulating film or the insulating film.

17. The method for manufacturing the semiconductor device, according to claim 15, wherein an insulating film containing a constituent element of the oxide semiconductor film and a film containing a constituent element different from that of the insulating film containing the constituent element of the oxide semiconductor film are formed as the gate insulating film or the insulating film.

18. The method for manufacturing the semiconductor device, according to claim 15, wherein an insulating film containing a gallium oxide is formed as the gate insulating film or the insulating film.

19. The method for manufacturing the semiconductor device, according to claim 15, wherein an insulating film containing a gallium oxide and a film containing a material different from the gallium oxide are formed as the gate insulating film or the insulating film.

20. The method for manufacturing the semiconductor device, according to claim 15, wherein an insulating film containing an aluminum oxide is formed as the gate insulating film or the insulating film.

21. The method for manufacturing the semiconductor device, according to claim 15, further comprising forming an inorganic insulating film over the insulating film, wherein the inorganic insulating film is a silicon nitride film or an aluminum oxide film.

22. The method for manufacturing the semiconductor device, according to claim 15, wherein the oxygen content in the insulating film is less than four times the stoichiometric proportion of the insulating film.