Semiconductor device and manufacturing method thereof

• US 8,865,555 B2
• Filed: 01/23/2012
• Issued: 10/21/2014
• Est. Priority Date: 01/26/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Fujii, Teruyuki, Nagamatsu, Sho
• Primary Examiner(s): Reames, Matthew
• Assistant Examiner(s): LIU, BENJAMIN T
• Application Number:
  US13/355,950
• Publication Number:
  US 20120187396A1
• Time in Patent Office: 1,002 Days
• Field of Search: 257/43, 257/E29.296, 438/104, 438/296, 438/197, 438/164, 438/424
• US Class Current: 438/296
• CPC Class Codes: H01L 23/564 Details not otherwise provided for, e.g. protection against moisture getters H01L23/26
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A base insulating film is formed over a substrate. A first oxide semiconductor film is formed over the base insulating film, and then first heat treatment is performed to form a second oxide semiconductor film. Then, selective etching is performed to form a third oxide semiconductor film. An insulating film is formed over the first insulating film and the third oxide semiconductor film. A surface of the insulating film is polished to expose a surface of the third oxide semiconductor film, so that a sidewall insulating film is formed in contact with at least a side surface of the third oxide semiconductor film. Then, a source electrode and a drain electrode are formed over the sidewall insulating film and the third oxide semiconductor film. A gate insulating film and a gate electrode are formed.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

forming a first oxide semiconductor film over the first insulating film;

forming a depression in the first insulating film and forming a second oxide semiconductor film by selectively etching the first insulating film and the first oxide semiconductor film;

forming a second insulating film over the first insulating film and the second oxide semiconductor film;

forming a third insulating film over the second insulating film;

forming a fourth insulating film in contact with side surfaces of the depression and the second oxide semiconductor film, and a fifth insulating film in contact with a side surface of the fourth insulating film by polishing the second insulating film and the third insulating film so that the fourth insulating film and the fifth insulating film are provided in the depression;

forming a source electrode and a drain electrode over the second oxide semiconductor film;

forming a sixth insulating film over the second oxide semiconductor film, the source electrode, and the drain electrode; and

forming a gate electrode over the sixth insulating film.

2. The method for manufacturing a semiconductor device according to claim 1 further comprising the step of heating the first oxide semiconductor film.

3. The method for manufacturing a semiconductor device according to claim 1 further comprising the step of forming a projection in a region which is in the first insulating film and in contact with the second oxide semiconductor film by selectively etching the first oxide semiconductor film and the first insulating film.

4. The method for manufacturing a semiconductor device according to claim 1 further comprising the step of:

forming a first oxide semiconductor region overlapping with the gate electrode, a pair of second oxide semiconductor regions between which the first oxide semiconductor region is sandwiched, and a pair of third oxide semiconductor regions which is provided in regions overlapping with the source electrode and the drain electrode by adding a dopant to the second oxide semiconductor film after the gate electrode is formed.

5. The method for manufacturing a semiconductor device according to claim 4,

wherein the pair of second oxide semiconductor regions is regions containing the dopant, and

wherein the dopant is one or more of nitrogen, phosphorus, arsenic, hydrogen, helium, neon, argon, krypton, and xenon.

6. The method for manufacturing a semiconductor device according to claim 1,

wherein the first oxide semiconductor film and the second oxide semiconductor film comprise one or more elements selected from In, Ga, Sn, and Zn.

7. The method for manufacturing a semiconductor device according to claim 1,

wherein the first oxide semiconductor film and the second oxide semiconductor film are each an oxide semiconductor film which is non-single-crystal and comprises a c-axis aligned crystalline region.

8. The method for manufacturing a semiconductor device according to claim 1 further comprising the step of heating the third insulating film so that part of oxygen in the third insulating film is released.

9. The method for manufacturing a semiconductor device according to claim 8, wherein part of the released oxygen is diffused to the second oxide semiconductor film.

10. A method for manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

forming a first oxide semiconductor film over the first insulating film;

forming a second oxide semiconductor film by selectively etching the first oxide semiconductor film;

forming a second insulating film over the first insulating film and the second oxide semiconductor film;

forming a third insulating film over the second insulating film;

forming a fourth insulating film by polishing a surface of the third insulating film so that the second insulating film is exposed;

forming a fifth insulating film by etching the second insulating film so that the second oxide semiconductor film is exposed;

forming a source electrode and a drain electrode over the second oxide semiconductor film;

forming a sixth insulating film over the second oxide semiconductor film, the source electrode, and the drain electrode; and

forming a gate electrode overlapping with the second oxide semiconductor film, over the sixth insulating film.

11. The method for manufacturing a semiconductor device according to claim 10 further comprising the step of heating the first oxide semiconductor film.

12. The method for manufacturing a semiconductor device according to claim 10 further comprising the step of forming a projection in a region which is in the first insulating film and in contact with the second oxide semiconductor film by selectively etching the first oxide semiconductor film and the first insulating film.

13. The method for manufacturing a semiconductor device according to claim 10 further comprising the step of:

forming a first oxide semiconductor region overlapping with the gate electrode, a pair of second oxide semiconductor regions between which the first oxide semiconductor region is sandwiched, and a pair of third oxide semiconductor regions which is provided in regions overlapping with the source electrode and the drain electrode by adding a dopant to the second oxide semiconductor film after the gate electrode is formed.

14. The method for manufacturing a semiconductor device according to claim 13,

wherein the pair of second oxide semiconductor regions is regions containing the dopant, and

wherein the dopant is one or more of nitrogen, phosphorus, arsenic, hydrogen, helium, neon, argon, krypton, and xenon.

15. The method for manufacturing a semiconductor device according to claim 10,

wherein the first oxide semiconductor film and the second oxide semiconductor film comprise one or more elements selected from In, Ga, Sn, and Zn.

16. The method for manufacturing a semiconductor device according to claim 10,

wherein the first oxide semiconductor film and the second oxide semiconductor film are each an oxide semiconductor film which is non-single-crystal and comprises a c-axis aligned crystalline region.

17. The method for manufacturing a semiconductor device according to claim 10 further comprising a step of heating the fourth insulating film and the fifth insulating film so that part of oxygen in at least one of the fourth insulating film and the fifth insulating film is released.

18. The method for manufacturing a semiconductor device according to claim 17, wherein part of the released oxygen is diffused to the second oxide semiconductor film.

19. A method for manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

forming a first oxide semiconductor film over the first insulating film;

forming a second oxide semiconductor film by selectively etching the first oxide semiconductor film;

forming a second insulating film over the first insulating film and the second oxide semiconductor film;

forming a third insulating film by polishing a surface of the second insulating film so that the second oxide semiconductor film is exposed;

forming a first conductive film over the third insulating film and the second oxide semiconductor film;

forming a first resist mask over the first conductive film;

forming a pair of second conductive films by selectively etching the first conductive film with use of the first resist mask;

forming a second resist mask and exposing at least part of regions which are in the pair of second conductive films and overlap with the second oxide semiconductor film by shrinking the first resist mask;

forming a source electrode and a drain electrode which each comprise a region having a first thickness and a region having a second thickness that is smaller than the first thickness by etching part of the pair of second conductive films with use of the second resist mask;

forming a fourth insulating film over the second oxide semiconductor film, the source electrode, and the drain electrode;

forming a gate electrode overlapping with the second oxide semiconductor film, over the fourth insulating film;

forming a first oxide semiconductor region overlapping with the gate electrode, a pair of second oxide semiconductor regions between which the first oxide semiconductor region is sandwiched, a pair of third oxide semiconductor regions overlapping with at least the regions having the first thickness, and a pair of fourth oxide semiconductor regions overlapping with the regions having the second thickness by adding a dopant to the second oxide semiconductor film.

20. The method for manufacturing a semiconductor device according to claim 19 further comprising the step of heating the first oxide semiconductor film.

21. The method for manufacturing a semiconductor device according to claim 19 further comprising the step of forming a projection in a region which is in the first insulating film and in contact with the second oxide semiconductor film by selectively etching the first oxide semiconductor film and the first insulating film.

22. The method for manufacturing a semiconductor device according to claim 19,

wherein the pair of second oxide semiconductor regions and the pair of fourth oxide semiconductor regions are regions containing the dopant, and

wherein the dopant is one or more of nitrogen, phosphorus, arsenic, hydrogen, helium, neon, argon, krypton, and xenon.

23. The method for manufacturing a semiconductor device according to claim 19,

wherein the first oxide semiconductor film and the second oxide semiconductor film comprise one or more elements selected from In, Ga, Sn, and Zn.

24. The method for manufacturing a semiconductor device according to claim 19,

wherein the first oxide semiconductor film and the second oxide semiconductor film are each an oxide semiconductor film which is non-single-crystal and comprises a c-axis aligned crystalline region.

25. The method for manufacturing a semiconductor device according to claim 19 further comprising a step of heating the third insulating film so that part of oxygen in the third insulating film is released.

26. The method for manufacturing a semiconductor device according to claim 25, wherein part of the released oxygen is diffused to the second oxide semiconductor film.

27. A method for manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

forming a first oxide semiconductor film over the first insulating film;

forming a depression in the first insulating film and forming a second oxide semiconductor film by selectively etching the first insulating film and the first oxide semiconductor film;

forming a second insulating film over the first insulating film and the second oxide semiconductor film;

forming a third insulating film over the second insulating film;

forming a fourth insulating film in contact with side surfaces of the depression and the second oxide semiconductor film, and a fifth insulating film in contact with a side surface of the fourth insulating film by polishing the second insulating film and the third insulating film so that the fourth insulating film and the fifth insulating film are provided in the depression;

forming a source electrode and a drain electrode over the second oxide semiconductor film;

forming a sixth insulating film over the second oxide semiconductor film, the source electrode, and the drain electrode; and

forming a gate electrode over the sixth insulating film,

wherein the fourth insulating film contains oxygen at a ratio exceeding a ratio of oxygen in a stoichiometric composition of the fourth insulating film.

28. The method for manufacturing a semiconductor device according to claim 27,

wherein the second oxide semiconductor film comprises one or more elements selected from In, Ga, Sn, and Zn.

29. The method for manufacturing a semiconductor device according to claim 27,

wherein the second oxide semiconductor film is non-single-crystal and comprises a c-axis aligned crystalline region.