LED having a low defect N-type layer that has grown on a silicon substrate
First Claim
1. A method of manufacturing a Light Emitting Diode (LED) device, comprising:
- (a) forming a buffer layer on a silicon substrate, and then forming a template layer on the buffer layer;
(b) forming a superlattice structure directly on the template layer, wherein the superlattice structure includes a plurality of periods, and wherein each period of the superlattice structure includes an aluminum-gallium-nitride sublayer and a gallium-nitride sublayer;
(c) forming an n-type layer over and directly on the superlattice structure;
(d) forming an active layer over the n-type layer, wherein the active layer includes an amount of indium;
(e) forming a p-type layer over the active layer such that the silicon substrate, the buffer layer, the template layer, the superlattice structure, the n-type layer, the active layer, and the p-type layer form a first structure;
(f) bonding a conductive carrier to the first structure thereby forming a second structure;
(g) removing the silicon substrate from the second structure thereby forming a third structure.
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Accused Products
Abstract
A vertical GaN-based blue LED has an n-type GaN layer that was grown directly on Low Resistance Layer (LRL) that in turn was grown over a silicon substrate. In one example, the LRL is a low sheet resistance GaN/AlGaN superlattice having periods that are less than 300 nm thick. Growing the n-type GaN layer on the superlattice reduces lattice defect density in the n-type layer. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form finished LED devices. In some examples, some or all of the LRL remains in the completed LED device such that the LRL also serves a current spreading function. In other examples, the LRL is entirely removed so that no portion of the LRL is present in the completed LED device.
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Citations
19 Claims
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1. A method of manufacturing a Light Emitting Diode (LED) device, comprising:
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(a) forming a buffer layer on a silicon substrate, and then forming a template layer on the buffer layer; (b) forming a superlattice structure directly on the template layer, wherein the superlattice structure includes a plurality of periods, and wherein each period of the superlattice structure includes an aluminum-gallium-nitride sublayer and a gallium-nitride sublayer; (c) forming an n-type layer over and directly on the superlattice structure; (d) forming an active layer over the n-type layer, wherein the active layer includes an amount of indium; (e) forming a p-type layer over the active layer such that the silicon substrate, the buffer layer, the template layer, the superlattice structure, the n-type layer, the active layer, and the p-type layer form a first structure; (f) bonding a conductive carrier to the first structure thereby forming a second structure; (g) removing the silicon substrate from the second structure thereby forming a third structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A Light Emitting Diode (LED) device for emitting non-monochromatic light, the LED device comprising:
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a Low Resistance Layer (LRL) that includes a plurality of periods, wherein at least one of the periods of the LRL includes an aluminum-gallium-nitride sublayer and a gallium-nitride sublayer; an n-type layer disposed in direct contact with the LRL; a p-type layer; an active layer disposed between the n-type layer and the p-type layer, wherein the active layer includes an amount of indium; a conductive carrier; a first electrode; and a second electrode adapted to conduct a current, wherein the current flows from the second electrode, through the conductive carrier, through the p-type layer, through the active layer, through the n-type layer, through the LRL, and to the first electrode thereby causing the non-monochromatic light to be emitted. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A method of manufacturing, comprising:
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(a) bonding a conductive carrier to a first structure thereby forming a second structure, wherein the first structure comprises; a silicon substrate; a superlattice structure disposed on the silicon substrate, wherein the superlattice structure includes a plurality of periods, wherein each period is less than three hundred nanometers thick and includes a sublayer of gallium nitride; an n-type gallium-nitride layer disposed directly on the superlattice structure; a p-type gallium-nitride layer; and an active layer disposed between the n-type gallium-nitride layer and the p-type gallium-nitride layer, wherein the active layer comprises an amount of indium; (b) removing the silicon substrate and some but not all of the superlattice structure from the second structure thereby forming a third structure that includes a part of the superlattice structure; and (c) forming metal electrodes on the third structure.
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19. A method of manufacturing, comprising:
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(a) bonding a conductive carrier to a first structure thereby forming a second structure, wherein the first structure comprises; a silicon substrate; a superlattice structure disposed on the silicon substrate, wherein the superlattice structure includes a plurality of periods, wherein each period is less than three hundred nanometers thick and includes a sublayer of gallium nitride; an n-type gallium-nitride layer disposed directly on the superlattice structure; a p-type gallium-nitride layer; and an active layer disposed between the n-type gallium-nitride layer and the p-type gallium-nitride layer, wherein the active layer comprises an amount of indium (b) removing the silicon substrate, all of the superlattice structure, and some but not all of the n-type gallium-nitride layer from the second structure thereby forming a third structure that includes a part of the n-type layer; and (c) forming metal electrodes on the third structure.
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Specification