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Nonvolatile semiconductor memory device

  • US 8,866,139 B2
  • Filed: 12/26/2012
  • Issued: 10/21/2014
  • Est. Priority Date: 03/08/2012
  • Status: Active Grant
First Claim
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1. A nonvolatile semiconductor memory device, comprising:

  • a semiconductor layer;

    a first insulating film formed on the semiconductor layer;

    a charge storage film formed on the first insulating film, the charge storage film comprising C60 fullerenes;

    a second insulating film formed on the charge storage film; and

    a control electrode formed on the second insulating film,wherein the C60 fullerenes have two molecules short-range order, and do not have long-range order.

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