Light emitting device

• US 8,866,173 B2
• Filed: 07/18/2012
• Issued: 10/21/2014
• Est. Priority Date: 04/23/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jeong, Hwan Hee
• Primary Examiner(s): Ho, Hoang-Quan
• Assistant Examiner(s): Nguyen, Cuong B
• Application Number:
  US13/552,194
• Publication Number:
  US 20120280269A1
• Time in Patent Office: 825 Days
• Field of Search: 257/103, 257/183, 257/184, 257/189, 257/200, 257/201, 257/257, 257/E33.001, 257/E33.016, 257/E33.023, 257/E33.028, 257/E33.03, 257/E33.049
• US Class Current: 257/98
• CPC Class Codes: F21K 9/23 Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
• CPC Class Codes: F21Y 2105/10 comprising a two-dimensional array of point-like light-generating elements
• CPC Class Codes: F21Y 2113/13 comprising an assembly of point-like light sources
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; an electrode on the light emitting structure; a protection layer under a peripheral region of the light emitting structure; and an electrode layer under the light emitting structure, wherein the protection layer comprises a first layer, a second layer, and a third layer, wherein the first layer comprises a first metallic material, and wherein the second layer is disposed between the first layer and the third layer, the second layer has an insulating material or a conductive material.

Claims

1. A light emitting device, comprising:

a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer;

an electrode on the light emitting structure;

a protection layer under a peripheral region of the light emitting structure; and

an electrode layer under the light emitting structure,

wherein the protection layer comprises a first layer, a second layer, and a third layer,

wherein the first layer comprises a first metallic material,

wherein the second layer is disposed between the first layer and the third layer, the second layer has an insulating material or an oxide-based conductive material,

wherein a portion of the electrode layer directly physically contacts the light emitting structure,

wherein a top most surface of the protection layer is disposed below the light emitting structure wherein the electrode layer comprises one of a conductive support member, an adhesive layer, a reflective layer, and an ohmic contact layer, and wherein the first, the third, and the second layers directly physically contact the ohmic contact layer.

2. The light emitting device of claim 1, wherein the first layer includes a bottom surface, a top surface, and a side surface which are planar surfaces.

3. The light emitting device of claim 1, wherein the first layer directly physically contacts the adhesive layer, and the reflective layer is disposed between the first semiconductor layer and the adhesive layer.

4. The light emitting device of claim 1, wherein the third layer directly physically contacts the first semiconductor layer.

5. The light emitting device of claim 1, wherein the second layer includes opposite planar surfaces and directly physically contacts the electrode layer on the light emitting structure.

6. The light emitting device of claim 1, wherein the second layer comprises a plurality of sub layers between the first layer and the third layer.

7. The light emitting device of claim 6, wherein at least one of the plurality of sub layers includes a diffusion barrier layer.

8. The light emitting device of claim 7, wherein the sub layers include at least one selected from the group consisting of an insulating material, a conductive material, and a second metallic material.

9. The light emitting device of claim 1, wherein the protection layer surrounds a portion of an outer side surface of the electrode layer.

10. The light emitting device of claim 1, wherein the ohmic contact layer directly physically contacts the first semiconductor layer.

11. A light emitting device, comprising:

an electrode member;

a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the electrode member; and

a protection layer including a plurality of layers on a peripheral region of one of the light emitting structure and the electrode member,

wherein the protection layer comprises a first layer, a second layer, and a third layer,

wherein the first layer and the third layer comprise metallic materials,

wherein the third layer has a top surface and a bottom surface,

wherein the bottom and the top surfaces of the third layer comprise planar surfaces,

wherein the protection layer surrounds an uppermost portion of the electrode member,

wherein the protection layer comprises a first portion and a second portion opposite to the first portion,

wherein a portion of the electrode member is disposed between the first portion and the second portion and directly physically contacts the light emitting structure,

wherein a top most surface of the third layer is disposed below the light emitting structure, wherein the electrode member comprises one of an electrode, an adhesive layer, a reflective layer, and an ohmic contact layer, and wherein the first, the third, and the second layers directly physically contact the ohmic contact layer.

12. The light emitting device of claim 11, wherein the first layer is spaced apart from the third layer with substantially the same distance.

13. The light emitting device of claim 11, wherein the first layer includes a bottom surface, a top surface, and a side surface which are planar surfaces.

14. The light emitting device of claim 11, wherein the third layer includes a bottom surface, a top surface, and a side surface which are planar surfaces.

15. The light emitting device of claim 11, wherein the second layer includes a diffusion barrier layer.

16. A light emitting device, comprising:

a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer;

an electrode on the light emitting structure;

a protection layer;

an electrode layer under the light emitting structure;

a support substrate under the electrode layer,

wherein the protection layer comprises a first layer, a third layer, and a second layer between the first layer and the third layer,

wherein the first and the third layers comprise a metallic material,

wherein the light emitting structure has a light extraction structure that includes concavo-convex patterns,

wherein the electrode layer comprises one of a reflective layer, an ohmic contact layer, and an adhesive layer,

wherein the third layers include a top surface and a bottom surface, the top and the bottom surfaces having a planar surface,

wherein a side surface of the second layer directly physically contacts a side surface of the electrode layer,

wherein a top most surface of the third layer is disposed below the light emitting structure, and wherein the first, the third, and the second layers directly physically contact the ohmic contact layer.

17. The light emitting device of claim 16, wherein the first layer is physically spaced apart from the third layer.