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Inductor device and fabrication method

  • US 8,866,259 B2
  • Filed: 11/30/2012
  • Issued: 10/21/2014
  • Est. Priority Date: 06/06/2012
  • Status: Active Grant
First Claim
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1. An inductor device comprising:

  • a semiconductor substrate;

    a dielectric layer disposed on the semiconductor substrate;

    a planar spiral wiring disposed on the dielectric layer, the planar spiral wiring including a first spiral metal wiring and a second spiral metal wiring connected to a first end of the first spiral metal wiring, wherein the second spiral metal wiring includes at least two sub-metal-lines isolated with one another;

    a first contact layer disposed on the dielectric layer and connected to a second end of the first spiral metal wiring; and

    a second contact layer coupled to only at an end of the second spiral metal wiring, such that the at least two isolated sub-metal-lines of the second spiral metal wiring are in a parallel configuration between the second contact layer and the first spiral metal wiring,wherein, in a same planar layer, the first spiral metal wiring and, the second spiral metal wiring including the parallel configuration of the at least two isolated sub-metal-lines, are configured in series between the first contact layer and the second contact layer.

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