Carbon-based semiconductors
First Claim
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1. An apparatus comprising:
- a carbon-based semiconductor material including n-type and p-type materials that form a p-n junction; and
first and second electrodes including a carbon allotrope, the first electrode being connected to the n-type material and the second electrode being connected to the p-type material, the electrodes being configured and arranged to collect charge generated at the p-n junction, wherein the carbon-based semiconductor material is arranged between the first and second electrodes, the p-n junction is configured and arranged to exhibit a photovoltaic effect, and at least one of the electrodes is configured and arranged to pass light to the carbon-based semiconductor material for generating the charges; and
wherein the carbon-based semiconductor material includes p-type semiconducting carbon nanotubes and at least one of n-type C60 material and n-type C70 material.
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Abstract
All-carbon-based semiconductor devices are provided. In accordance with an example embodiment, an apparatus includes n-type and p-type carbon-based semiconductor material that form a p-n junction, which are respectively coupled to electrodes having a carbon allotrope. A first one of electrodes is connected to the n-type material and a second one of the electrodes is connected to the p-type material, and collect charge presented at the p-n junction.
11 Citations
28 Claims
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1. An apparatus comprising:
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a carbon-based semiconductor material including n-type and p-type materials that form a p-n junction; and first and second electrodes including a carbon allotrope, the first electrode being connected to the n-type material and the second electrode being connected to the p-type material, the electrodes being configured and arranged to collect charge generated at the p-n junction, wherein the carbon-based semiconductor material is arranged between the first and second electrodes, the p-n junction is configured and arranged to exhibit a photovoltaic effect, and at least one of the electrodes is configured and arranged to pass light to the carbon-based semiconductor material for generating the charges; and
wherein the carbon-based semiconductor material includes p-type semiconducting carbon nanotubes and at least one of n-type C60 material and n-type C70 material. - View Dependent Claims (2, 3, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 27, 28)
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4. An apparatus comprising:
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a carbon-based semiconductor material including n-type and p-type materials that form a p-n junction; and first and second electrodes including a carbon allotrope, the first electrode being connected to the n-type material and the second electrode being connected to the p-type material, the electrodes being configured and arranged to collect charge generated at the p-n junction, wherein the carbon-based semiconductor material is stacked vertically between the first and second electrodes, the p-n junction is configured and arranged to exhibit a photovoltaic effect, and at least one of the electrodes is configured and arranged to pass light to the carbon-based semiconductor material for generating the charges; and
wherein the carbon-based semiconductor material includes p type semiconducting carbon nanotubes and at least one of n-type C60 material and n-type C70 material.
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15. An apparatus comprising:
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a carbon-based semiconductor material including n-type and p-type materials that form a p-n junction; and first and second electrodes including a carbon allotrope, the first electrode being connected to the n-type material and the second electrode being connected to the p-type material, the electrodes being configured and arranged to collect charge generated at the p-n junction, wherein the carbon-based semiconductor material includes a plurality of single-walled carbon nanotubes including first and second types of nanotubes having different light absorption characteristics, the first type of nanotubes being configured and arranged to absorb more light energy than the second type of nanotubes under a first light condition, and the second type of nanotubes being configured and arranged to absorb more light energy than the first type of nanotubes under a second light condition that is different than the first light condition.
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16. A photovoltaic apparatus comprising:
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an anode having an ozone-plasma-treated reduced graphene oxide sheet; a cathode having n-doped carbon nanotubes; and a carbon-based semiconductor material separating the anode and cathode and including an n-type material including n-type fullerene connected to the cathode, and a p-type material including p-type semiconducting carbon nanotubes, the n-type material and p-type material a forming p-n junction configured and arranged to generate charge via a photovoltaic effect in response to light passed via one of the anode and cathode, the anode and cathode being configured and arranged to pass the generated charge. - View Dependent Claims (17)
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18. A method comprising:
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forming a first electrode including a carbon allotrope; forming a carbon-based semiconductor material including n-type and p-type materials that form a p-n junction that exhibits a photovoltaic effect, the n-type material being connected to the first electrode; and forming a second electrode including a carbon allotrope connected to the p-type material, the first and second electrodes being configured and arranged to collect charge generated at the p-n junction, wherein the carbon-based semiconductor material is arranged between the first and second electrodes, the p-n junction is configured and arranged to exhibit a photovoltaic effect, and at least one of the electrodes is configured and arranged to pass light to the carbon-based semiconductor material for generating the charges; and
wherein the carbon-based semiconductor material includes p-type semiconducting carbon nanotubes and at least one of n-type C60 material and n-type C70 material. - View Dependent Claims (19, 20, 21, 22, 23, 25, 26)
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24. A method comprising:
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forming a first electrode including a carbon allotrope; forming a carbon-based semiconductor material including n-type and p-type materials that form a p-n junction that exhibits a photovoltaic effect, the n-type material being connected to the first electrode; and forming a second electrode including a carbon allotrope connected to the p-type material, the first and second electrodes being configured and arranged to collect charge generated at the p-n junction, wherein forming the carbon-based semiconductor material includes forming first and second types of nanotubes having different light absorption characteristics, the first type of nanotubes being configured and arranged to absorb more light energy than the second type of nanotubes under a first light condition, and the second type of nanotubes being configured and arranged to absorb more light energy than the first type of nanotubes under a second light condition that is different than the first light condition.
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Specification