Super-resolution imaging systems

• US 8,866,951 B2
• Filed: 04/27/2012
• Issued: 10/21/2014
• Est. Priority Date: 08/24/2011
• Status: Expired due to Fees

• Current Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Original Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Inventors: Keelan, Brian
• Primary Examiner(s): Tran, Sinh
• Assistant Examiner(s): Wu, Zhenzhen
• Application Number:
  US13/458,599
• Publication Number:
  US 20130050526A1
• Time in Patent Office: 907 Days
• Field of Search: 348/222.1, 348/218.1, 348/219.1, 348/335, 348/340
• US Class Current: 348/340
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H04N 25/41 Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors

Abstract

Electronic devices may include super-resolution imaging systems for capturing multiple relatively low-resolution images and combining the captured images to form a high-resolution image. The imaging system may include image sensors configured to capture information above the Nyquist frequency of the image sensor by providing each image sensor pixel in an array of image sensor pixels with structures for reducing the size of the clear pixel aperture below the size of the image sensor pixel. The structures may be configured to pass light that is incident on a central region of the image sensor pixel to a photo-sensitive element through a color filter element and to reject light that is incident on a surrounding edge region. The structures may include a microlens configured to reject light that is incident on the edge region or a combination of a microlens and masking structures. Masking structures may be absorbing, reflecting, or interfering structures.

Claims

1. An image sensor pixel, comprising:

a photo-sensitive element formed in a substrate, wherein the photo-sensitive element is configured to convert light into electric charge;

lensing structures having a transmissive central region, surrounding opaque edge regions, and a transition region between the center and edge regions in which the lensing structures gradually transition from being transmissive to being opaque such that the lensing structures are configured to pass a first portion of the light that is incident on the central region of the lensing structures onto the photo-sensitive element, to reject a second portion of the light that is incident on the surrounding edge regions of the lensing structures, and to partially pass and partially reject a third portion of the light that is incident on the transition region.

2. The image sensor pixel defined in claim 1 wherein the lensing structures comprise:

a microlens configured to focus the light onto the photo-sensitive element; and

a masking structure interposed between the microlens and the substrate in the surrounding edge region of the lensing structures.

3. The image sensor pixel defined in claim 2 wherein the masking structure comprises a patterned metal masking structure having an opening in the central region of the lensing structures for allowing the first portion of the light to pass through the opening.

4. The image sensor pixel defined in claim 2 wherein the masking structure comprises light absorbing material formed in the surrounding edge region.

5. The image sensor pixel defined in claim 2 wherein the masking structure comprises light-interfering structures configured to generate interference for rejecting the second portion of the light.

6. The image sensor pixel defined in claim 2, further comprising:

a color filter element interposed between the substrate and the lensing structures, wherein the lensing structures are configured to pass the first portion of the light that is incident on the central region of the lensing structures onto the photo-sensitive element through the color filter element.

7. The image sensor pixel defined in claim 2 wherein the masking structure is formed on a surface of the substrate.

8. The image sensor pixel defined in claim 1 wherein the lensing structures comprise a microlens having a size and a shape that are configured to focus the first portion of the light onto the photo-sensitive element and to reject the second portion of the light.

9. The image sensor pixel defined in claim 8 wherein the lensing structures further comprise a masking structure in the surrounding edge region.

10. The image sensor pixel defined in claim 1 wherein the photo-sensitive element comprises a photodiode.