Metrology method and apparatus, and device manufacturing method

• US 8,867,020 B2
• Filed: 09/19/2011
• Issued: 10/21/2014
• Est. Priority Date: 11/12/2010
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Smilde, Hendrik Jan Hidde, Warnaar, Patrick
• Primary Examiner(s): NGUYEN, HUNG
• Application Number:
  US13/235,902
• Publication Number:
  US 20120242970A1
• Time in Patent Office: 1,128 Days
• Field of Search: 355/52, 355/53, 355/55, 355 67- 71, 355/77, 356399-401, 356/237.2, 700/105, 700/114, 250/548
• US Class Current: 355/67
• CPC Class Codes: G03F 7/70483 Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 9/00 Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically G03F7/22 takes precedence; preparation of photographic masks G03F1/00; within photographic printing apparatus for making copies G03B27/00

Abstract

Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application. A second type of correction may be applied to reduce the influence of asymmetry between the first and second modes of illumination or imaging, for example to permit a more accurate overly measurement in a semiconductor device manufacturing process.

Claims

1. A method of measuring asymmetry in a periodic structure formed by a lithographic process on a substrate, the method comprising:

using the lithographic process to form a periodic structure on the substrate;

a first measurement step comprising forming and detecting a first image of the periodic structure while illuminating the structure with a first beam of radiation, the first image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation;

a second measurement step comprising forming and detecting a second image of the periodic structure while illuminating the structure with a second beam of radiation, the second image being formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part, in a diffraction spectrum of the periodic structure; and

using a difference in intensity values derived from the detected first and second images together to determine the asymmetry in the profile of the periodic structure,

wherein the first and second measurement steps are performed using different optical paths within a measurement optical system, and

at least one correction, applied either to the first and second image intensity values or to the calculated difference between them, for reducing an influence on the determined asymmetry of the difference in optical paths between the first and second measurement steps.

2. The method of claim 1, wherein:

at least one correction parameter is defined with predetermined values associated with different available optical paths, and

the correction comprises selecting a value for the correction parameter according to the optical path used in one or both of the measurement steps and applying the correction parameter to the intensity values derived from the image obtained in that measurement step.

3. The method of claim 1, wherein:

the first and second measurement steps are performed using respectively a first and a second illumination mode of the measurement optical system, such that the first and second beams of radiation are incident on the periodic structure from symmetrically opposed angles relative to an optical axis of the measurement optical system, without rotating the substrate relative to the measurement optical system, and

at least one correction parameter is defined to compensate for asymmetry between optical paths defining the first and second illumination modes.

4. The method of claim 1, wherein the first and second measurement steps are performed using respectively a first and a second imaging mode of the measurement optical system such that the first and second images are formed using portions of radiation diffracted by the periodic structure to diametrically opposed angles relative to an optical axis of the measurement optical system, without rotating the substrate relative to the measurement optical system, and at least one correction parameter is defined to compensate for asymmetry between optical paths defining the first and second imaging modes.

5. The method of claim 1, further comprising calibration wherein values for the correction parameter are at least partially determined using the results of a plurality of calibration measurements performed on a substrate which is rotated and measured without changing the optical path.

6. The method of claim 1, wherein the correction parameter value is selected based at least in part on the position of the periodic structure within a field of view of the measurement optical system.

7. The method of claim 6 wherein:

the field of view is defined by an illumination spot of the respective radiation beam,

the periodic structure occupies less than half the area of the field of view such that a plurality of periodic structures can be imaged simultaneously within the image field, and

a value for the correction parameter is defined for a set of two or more alternative positions within the field of view at which a periodic structure may be imaged.

8. The method of claim 1, wherein separate correction parameters are defined for correcting (a) an asymmetry in intensity between illumination or imaging modes used in the first and second measurement steps and (b) a variation in illumination intensity across a field of view of the measurement optical system.

9. The method of claim 8, wherein the correction parameter (a) is further dependent or a position of the periodic structure within the field of view of the measurement optical system.

10. An inspection apparatus configured for measuring asymmetry in a periodic structure on a substrate, the inspection apparatus comprising:

an illumination arrangement operable to deliver first and second beams of radiation to the substrate for use in first and second measurements;

a detection arrangement operable during the first and second measurements to form and detect respective first and second images of the substrate using radiation diffracted from the substrate; and

a stop arrangement within the detection arrangement,

wherein the illumination arrangement and stop arrangement together are effective to stop zero order diffracted radiation contributing to the first and second images, and are configurable to form first and second images using first and second parts respectively of the non-zero order diffracted radiation, the first and second parts being symmetrically opposite one another in a diffraction spectrum of the diffracted radiation,

a computational arrangement operable to determine the asymmetry using a difference in intensity values derived from the first and second images, the computational arrangement is operable when calculating the difference to apply a correction for reducing an influence on the determined asymmetry of a difference between first and second optical paths, that are used within the inspection apparatus for the first and second measurements respectively.

11. The inspection apparatus of claim 10, wherein the inspection apparatus is further operable to perform a plurality of calibration measurements on a substrate which is rotated and measured without changing the optical path, and wherein the computational arrangement is further operable to determine, from results of the calibration measurements, values for the correction parameter.

12. The inspection apparatus of claim 10, wherein:

the detection arrangement is operable to image a plurality of periodic structures simultaneously within the image field, and

the computational arrangement is further operable to define a value for the correction for a set of two or more alternative positions within the field of view at which a periodic structure may be imaged.

13. A lithographic system comprising:

a lithographic apparatus comprising;

an illumination optical system arranged to illuminate a pattern;

a projection optical system arranged to project an image of the pattern onto a substrate; and

an inspection apparatus comprising,

an illumination arrangement operable to deliver first and second beams of radiation to the substrate for use in first and second measurements;

a detection arrangement operable during the first and second measurements to form and detect respective first and second images of the substrate using radiation diffracted from the substrate; and

a stop arrangement within the detection arrangement,

wherein the illumination arrangement and stop arrangement together are effective to stop zero order diffracted radiation contributing to the first and second images, and are configurable to form first and second images using first and second parts respectively of the non-zero order diffracted radiation, the first and second parts being symmetrically opposite one another in a diffraction spectrum of the diffracted radiation,

a computational arrangement operable to determine the asymmetry using a difference in intensity values derived from the first and second images, the computational arrangement is operable when calculating the difference to apply a correction for reducing an influence on the determined asymmetry of a difference between first and second optical paths, that are used within the inspection apparatus for the first and second measurements respectively,

wherein the lithographic apparatus is arranged to use the measurement results from the inspection apparatus in applying the pattern to further substrates.

14. A method of manufacturing devices wherein a device pattern is applied to a series of substrates using a lithographic process, the method including:

inspecting at least one periodic structure formed as part of or beside the device pattern on at least one of the substrates using an inspection method comprising,

using the lithographic process to form a periodic structure on the substrate;

a first measurement step comprising forming and detecting a first image of the periodic structure while illuminating the structure with a first beam of radiation, the first image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation;

a second measurement step comprising forming and detecting a second image of the periodic structure while illuminating the structure with a second beam of radiation, the second image being formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part, in a diffraction spectrum of the periodic structure; and

using a difference in intensity values derived from the detected first and second images together to determine the asymmetry in the profile of the periodic structure,

wherein the first and second measurement steps are performed using different optical paths within a measurement optical system, and

at least one correction, applied either to the first and second image intensity values or to the calculated difference between them, for reducing an influence on the determined asymmetry of the difference in optical paths between the first and second measurement steps, and

controlling the lithographic process for later substrates in accordance with the result of the inspection method.