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Thin-film LED with P and N contacts electrically isolated from the substrate

  • US 8,871,539 B2
  • Filed: 05/10/2013
  • Issued: 10/28/2014
  • Est. Priority Date: 06/10/2009
  • Status: Active Grant
First Claim
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1. A method of manufacturing a thin-film light emitting diode, comprising:

  • forming an epitaxial structure on a growth substrate, the epitaxial structure comprising a first epitaxial layer, a second epitaxial layer, and an active region between the first epitaxial layer and the second epitaxial layer;

    forming a reflective electrode layer on the second epitaxial layer of the epitaxial structure;

    attaching a substrate with a conductive adhesive layer to the reflective electrode layer such that the reflective electrode layer and the conductive adhesive layer together form a metallic current spreading layer;

    removing the growth substrate;

    removing part of the epitaxial structure so as to expose a surface of the metallic current spreading layer and a side wall of the first epitaxial layer, the active region and the second epitaxial layer to form a mesa with the epitaxial structure and the metallic current spreading layer, after removing the growth substrate; and

    forming a pad contact on the exposed surface of the metallic current spreading layer for a bonding wire.

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