Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrate
First Claim
1. A method for fabricating a vertical light-emitting diode (VLED) structure comprising:
- providing a carrier substrate;
forming a semiconductor structure on the carrier substrate comprising a p-GaN confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-GaN confinement layer configured to emit electromagnetic radiation, and an n-GaN confinement layer in electrical contact with the multiple quantum well (MQW) layer;
forming a reflective layer on the p-GaN confinement layer;
forming a conductive substrate on the reflective layer;
removing the carrier substrate from the semiconductor structure on the reflective layer and the conductive substrate using a laser pulse to expose a nitrogen-terminated surface of the n-GaN confinement layer; and
forming a metal contact on the nitrogen-terminated surface of the n-GaN confinement layer comprising a material selected from the group consisting of Al/Ni/Au, AlTi/Ni/Au, Al/Pt/Au, Al/TaN/Au, AlTi/Pt/Au, AlTi/TaN/Au, AlSi/Ni/Au, AlSi/Pt,/Au, AlSiTaN/Au, AlCu/Ni/Au, AlCu/Pt/Au, and AlCu/TaN/Au.
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Abstract
A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer.
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Citations
17 Claims
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1. A method for fabricating a vertical light-emitting diode (VLED) structure comprising:
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providing a carrier substrate; forming a semiconductor structure on the carrier substrate comprising a p-GaN confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-GaN confinement layer configured to emit electromagnetic radiation, and an n-GaN confinement layer in electrical contact with the multiple quantum well (MQW) layer; forming a reflective layer on the p-GaN confinement layer; forming a conductive substrate on the reflective layer; removing the carrier substrate from the semiconductor structure on the reflective layer and the conductive substrate using a laser pulse to expose a nitrogen-terminated surface of the n-GaN confinement layer; and forming a metal contact on the nitrogen-terminated surface of the n-GaN confinement layer comprising a material selected from the group consisting of Al/Ni/Au, AlTi/Ni/Au, Al/Pt/Au, Al/TaN/Au, AlTi/Pt/Au, AlTi/TaN/Au, AlSi/Ni/Au, AlSi/Pt,/Au, AlSiTaN/Au, AlCu/Ni/Au, AlCu/Pt/Au, and AlCu/TaN/Au. - View Dependent Claims (2, 3)
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4. A method for fabricating a vertical light-emitting diode (VLED) structure comprising:
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providing a carrier substrate; forming a semiconductor structure on the carrier substrate comprising a p-GaN confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-GaN confinement layer configured to emit electromagnetic radiation, and an n-GaN confinement layer in electrical contact with the multiple quantum well (MQW) layer; removing the carrier substrate using a laser system having parameters selected to generate a plurality of laser pulses configured to decompose interfacial layers of the n-GaN confinement layer with the carrier substrate, and to expose a nitrogen-terminated surface of the n-GaN confinement layer; and forming an n-contact on the nitrogen-terminated surface of the n-GaN confinement layer, the n-contact comprising a material selected from the group consisting of Al/Ni/Au, AlTi/Ni/Au, Al/Pt/Au, Al/T aN/Au, AlTi/Pt/Au, AlTi/TaN/Au, AlSi/Ni/Au, AlSi/Pt,/Au, AlSiTaN/Au, AlCu/Ni/Au, AlCu/Pt/Au, and AlCu/TaN/Au. - View Dependent Claims (5, 6, 7, 8, 9, 10)
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11. A method for fabricating a vertical light-emitting diode (VLED) structure comprising:
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providing a carrier substrate; forming a semiconductor structure on the carrier substrate comprising a p-GaN confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-GaN confinement layer configured to emit electromagnetic radiation, and an n-GaN confinement layer in electrical contact with the multiple quantum well (MQW) layer; forming a reflective layer on the p-GaN confinement layer; forming a conductive substrate on the reflective layer; removing the carrier substrate using a laser system having parameters selected to generate a plurality of laser pulses configured to decompose interfacial layers of the n-GaN confinement layer with the carrier substrate, and to expose a nitrogen-terminated surface of the n-GaN confinement layer; and forming an n-contact on the nitrogen-terminated surface of the n-GaN confinement layer comprising a material selected from the group consisting of Al/Ni/Au, AlTi/Ni/Au, Al/Pt/Au, Al/TaN/Au, AlTi/Pt/Au, AlTi/TaN/Au, AlSi/Ni/Au, AlSi/Pt,/Au, AlSiTaN/Au, AlCu/Ni/Au, AlCu/Pt/Au, and AlCu/TaN/Au. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification