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Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrate

  • US 8,871,547 B2
  • Filed: 02/10/2014
  • Issued: 10/28/2014
  • Est. Priority Date: 01/11/2005
  • Status: Active Grant
First Claim
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1. A method for fabricating a vertical light-emitting diode (VLED) structure comprising:

  • providing a carrier substrate;

    forming a semiconductor structure on the carrier substrate comprising a p-GaN confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-GaN confinement layer configured to emit electromagnetic radiation, and an n-GaN confinement layer in electrical contact with the multiple quantum well (MQW) layer;

    forming a reflective layer on the p-GaN confinement layer;

    forming a conductive substrate on the reflective layer;

    removing the carrier substrate from the semiconductor structure on the reflective layer and the conductive substrate using a laser pulse to expose a nitrogen-terminated surface of the n-GaN confinement layer; and

    forming a metal contact on the nitrogen-terminated surface of the n-GaN confinement layer comprising a material selected from the group consisting of Al/Ni/Au, AlTi/Ni/Au, Al/Pt/Au, Al/TaN/Au, AlTi/Pt/Au, AlTi/TaN/Au, AlSi/Ni/Au, AlSi/Pt,/Au, AlSiTaN/Au, AlCu/Ni/Au, AlCu/Pt/Au, and AlCu/TaN/Au.

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