Thin film transistor array substrate, organic light emitting display device comprising the same, and method of manufacturing the same
First Claim
1. A thin film transistor array substrate, comprising:
- a thin film transistor including an activation layer, a gate electrode, source and drain electrodes, a first insulation layer between the activation layer and the gate electrode, and a second insulation layer between the gate electrode and the source and drain electrodes;
a pixel electrode including a transparent conductive oxide, the pixel electrode being on a portion of the first insulation layer extending from the thin film transistor, and the pixel electrode being connected to one of the source and drain electrodes via an opening in the second insulation layer;
a capacitor including a first electrode and a second electrode, the first electrode being on a same layer as the activation layer and including a semiconductor doped with ion impurities, the second electrode being between the first and second insulation layers and including a transparent conductive oxide;
a third insulation layer covering the source and drain electrodes and exposing the pixel electrode; and
a connection portion connected to the first electrode, the connection portion disposed on a same layer as the first electrode, wherein the semiconductor doped with ion impurities is present continuously between the first electrode and the connection portion.
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Accused Products
Abstract
A thin film transistor array substrate includes a thin film transistor including an activation layer, a gate electrode, source and drain electrodes, a first insulation layer between the activation layer and the gate electrode, and a second insulation layer between the gate electrode and the source and drain electrodes, a pixel electrode including a transparent conductive oxide, the pixel electrode being on a portion of the first insulation layer extending from the thin film transistor and being connected to one of the source and drain electrodes via an opening in the second insulation layer, a capacitor including a first electrode and a second electrode, the first electrode being on a same layer as the activation layer and including a transparent conductive oxide, and the second electrode being between the first and second insulation layers, and a third insulation layer covering the source and drain electrodes and exposing the pixel electrode.
4 Citations
17 Claims
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1. A thin film transistor array substrate, comprising:
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a thin film transistor including an activation layer, a gate electrode, source and drain electrodes, a first insulation layer between the activation layer and the gate electrode, and a second insulation layer between the gate electrode and the source and drain electrodes; a pixel electrode including a transparent conductive oxide, the pixel electrode being on a portion of the first insulation layer extending from the thin film transistor, and the pixel electrode being connected to one of the source and drain electrodes via an opening in the second insulation layer; a capacitor including a first electrode and a second electrode, the first electrode being on a same layer as the activation layer and including a semiconductor doped with ion impurities, the second electrode being between the first and second insulation layers and including a transparent conductive oxide; a third insulation layer covering the source and drain electrodes and exposing the pixel electrode; and a connection portion connected to the first electrode, the connection portion disposed on a same layer as the first electrode, wherein the semiconductor doped with ion impurities is present continuously between the first electrode and the connection portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An organic light emitting display device, comprising:
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a thin film transistor including an activation layer, a gate electrode, source and drain electrodes, a first insulation layer between the activation layer and the gate electrode, and a second insulation layer between the gate electrode and the source and drain electrodes; a pixel electrode including a transparent conductive oxide, the pixel electrode being on a portion of the first insulation layer extending from the thin film transistor, and the pixel electrode being connected to one of the source and drain electrodes via an opening in the second insulation layer; a capacitor including a first electrode and a second electrode, the first electrode being on a same layer as the activation layer and including a semiconductor doped with ion impurities, and the second electrode being between the first and second insulation layers and including a transparent conductive oxide; a third insulation layer covering the source and drain electrodes and exposing the pixel electrode; an organic light emitting layer on the pixel electrode; an opposed electrode on the organic light emitting layer; and a connection portion connected to the first electrode, the connection portion disposed on a same layer as the first electrode, wherein the semiconductor doped with ion impurities is present continuously between the first electrode and the connection portion. - View Dependent Claims (12)
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13. A method of manufacturing a thin film transistor array substrate, the method comprising:
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a first mask process of forming a semiconductor layer on a substrate and forming an activation layer of a thin film transistor and a first electrode of a capacitor by patterning the semiconductor layer; a second mask process of forming a first insulation layer, forming a transparent conductive oxide layer on the first insulation layer, and forming a pixel electrode and a second electrode of a capacitor by patterning the transparent conductive oxide layer; a third mask process of forming a first metal layer, forming a gate electrode of a thin film transistor, and forming a metal connection layer on the pixel electrode; a fourth mask process of forming a second insulation layer, forming a source area and a drain area of the activation layer on the second insulation layer, and forming an opening for exposing the pixel electrode; a fifth mask process of forming a second metal layer and forming a source electrode and a drain electrode connected to the source area and the drain area by patterning the second metal layer; and a sixth mask process of forming a third insulation layer and removing the third insulation layer to expose the pixel electrode; wherein the first mask process further forms a connection portion connected to the first electrode and, after the third mask process, ion impurities are doped in the source area and the drain area, the first electrode, and the connection portion connected to the first electrode. - View Dependent Claims (14, 15, 16, 17)
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Specification