Embedded source/drains with epitaxial oxide underlayer
First Claim
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1. A semiconductor structure comprising:
- a substrate;
a channel region in the substrate; and
a bi-layer source/drain region including an embedded oxide region in the substrate and an embedded semiconductor region above the embedded oxide regionwherein the embedded oxide region comprises cadmium oxide, yttrium oxide, scandium oxide, cerium oxide, lanthanum oxide, praseodymium oxide, thorium oxide, or actinium oxide.
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Abstract
Semiconductor structures having embedded source/drains with oxide underlayers and methods for forming the same. Embodiments include semiconductor structures having a channel in a substrate, and a source/drain region adjacent to the channel including an embedded oxide region and an embedded semiconductor region located above the embedded oxide region. Embodiments further include methods of forming a transistor structure including forming a gate on a substrate, etching a source/drain recess in the substrate, filling a bottom portion of the source/drain recess with an oxide layer, and filling a portion of the source/drain recess not filled by the oxide layer with a semiconductor layer.
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Citations
17 Claims
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1. A semiconductor structure comprising:
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a substrate; a channel region in the substrate; and a bi-layer source/drain region including an embedded oxide region in the substrate and an embedded semiconductor region above the embedded oxide region wherein the embedded oxide region comprises cadmium oxide, yttrium oxide, scandium oxide, cerium oxide, lanthanum oxide, praseodymium oxide, thorium oxide, or actinium oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a transistor structure, the method comprising:
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etching a source/drain recess in a semiconductor substrate; forming an embedded oxide region in a portion of the source/drain recess; and forming an embedded semiconductor region in the source/drain recess above the embedded oxide region, wherein forming an embedded oxide region in the portion of the source/drain recess comprises growing an epitaxial oxide in a bottom portion of the source/drain recess; wherein the epitaxial oxide is a rare-earth oxide selected from the group consisting of cadmium oxide, yttrium oxide, scandium oxide, cerium oxide, lanthanum oxide, praseodymium oxide, thorium oxide, and actinium oxide. - View Dependent Claims (12, 13)
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14. A method of forming a source/drain region, the method comprising:
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selecting a desired amount of stress to be applied by the source/drain region; selecting a semiconductor material that will apply the desired amount of stress when formed in the source/drain region; selecting a oxide with a similar lattice constant as the semiconductor material; forming a source/drain recess having a top portion and a bottom portion in a substrate; forming the oxide in the bottom portion of the source/drain recess; and forming the semiconductor material on the oxide at least partially in the top portion of the source/drain recess, wherein the oxide comprises a rare-earth oxide selected from the group consisting of cadmium oxide, yttrium oxide, scandium oxide, cerium oxide, lanthanum oxide, praseodymium oxide, thorium oxide, and actinium oxide. - View Dependent Claims (15, 16, 17)
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Specification