Light emitting device and light emitting device package

• US 8,872,215 B2
• Filed: 02/23/2011
• Issued: 10/28/2014
• Est. Priority Date: 04/13/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Choi, Kwang Ki, Jeong, Hwan Hee, Lee, Sang Youl, Song, June O
• Primary Examiner(s): Mondt, Johannes P
• Application Number:
  US13/033,224
• Publication Number:
  US 20110248302A1
• Time in Patent Office: 1,343 Days
• Field of Search: None
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13062 Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure.

Claims

1. A light emitting device, comprising:

a first electrode;

a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode;

a second electrode on the light emitting structure; and

a control switch provided on the light emitting structure to control the light emitting structure, wherein the control switch includes;

a body including a first dopant;

source and drain regions including a second dopant on the body;

a gate insulating layer on the body between the source and drain regions; and

a gate electrode on the gate insulating layer,

wherein the body of the control switch is directly disposed on a top surface of the second semiconductor layer and the first electrode is disposed on a bottom surface of the first semiconductor layer.

2. The light emitting device of claim 1, wherein the control switch controls an operation of the light emitting structure in response to a control signal.

3. The light emitting device of claim 2, wherein the control signal includes one of an on/off control signal or a gray-scale control signal.

4. The light emitting device of claim 1, wherein the control switch includes a semiconductor switch.

5. The light emitting device of claim 4, wherein the semiconductor switch includes a MOSFET switch.

6. The light emitting device of claim 1, wherein the control switch is formed at an outer peripheral region of the light emitting structure.

7. The light emitting device of claim 1, wherein the body includes silicon.

8. The light emitting device of claim 1, wherein the first dopant has the same polarity as the first semiconductor layer.

9. The light emitting device of claim 1, wherein the second dopant has the same polarity as the second semiconductor layer.

10. The light emitting device of claim 1, further comprising source and drain electrodes on the source and drain regions, respectively.

11. The light emitting device of claim 10, further comprising a wire between one of the source and drain electrodes and the second electrode.

12. The light emitting device of claim 1, wherein the control switch is connected to the light emitting structure in series.

13. The light emitting device of claim 1, further comprising at least one of a reflective layer or an ohmic contact layer between the first electrode and the light emitting structure.

14. The light emitting device of claim 1, further comprising a concave-convex pattern on the light emitting structure contacting the second electrode.

19. The light emitting device of claim 1, wherein both of the body and the second electrode is directly disposed on the top surface of the second semiconductor layer.

20. The light emitting device of claim 1, further comprising a protective member on an outer peripheral region of a top surface of the first electrode, and

wherein the protective member vertically overlaps with the body of the control switch.

21. The light emitting device of claim 1, further comprising an ohmic contact layer between the first electrode and the light emitting structure,

wherein the ohmic contact layer contacts both of a side surface and a bottom surface of the protective member.

15. A light emitting device, comprising:

a first electrode;

a light emitting structure including a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer;

a second electrode on the second semiconductor layer;

a body on the second semiconductor layer;

source and drain regions on the body;

a gate insulating layer on the body between the source and drain regions; and

a gate electrode on the gate insulating layer,

wherein the second electrode is electrically connected to one of the source region or the drain region, and wherein both the body and the second electrode are directly disposed on a top surface of the second semiconductor layer.

17. The light emitting device of claim 15, wherein the gate insulating layer is disposed on a top surface of the body.

18. The light emitting device of claim 15, wherein a portion of the second semiconductor layer at which the second electrode is directly disposed comprises a n-type conductive semiconductor layer, and wherein the body comprises a p-type conductive semiconductor layer.

16. A light emitting device package, comprising:

a package body;

a light emitting device on the package body; and

a molding member surrounding the light emitting device, wherein the light emitting device includes;

a first electrode;

a protective member on an outer peripheral region of a top surface of the first electrode;

a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode;

a second electrode on the light emitting structure; and

a control switch on the light emitting structure to control the light emitting structure, wherein the control switch includes;

a body including a first dopant;

source and drain regions including a second dopant on the body;

a gate insulating layer on the body between the source and drain regions; and

a gate electrode on the gate insulating layer,

wherein the protective member vertically overlaps at least a portion of the body of the control switch.