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Silicon carbide semiconductor device and method for manufacturing the same

  • US 8,872,242 B2
  • Filed: 04/17/2013
  • Issued: 10/28/2014
  • Est. Priority Date: 05/22/2012
  • Status: Active Grant
First Claim
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1. A silicon carbide semiconductor device, comprising:

  • a first electrode;

    a silicon carbide substrate having a first surface provided with said first electrode and a second surface opposite to said first surface, and having a first conductivity type, said silicon carbide substrate having a plurality of first trenches arranged to be spaced from one another in said second surface;

    a gate layer covering an inner surface of each of said plurality of first trenches and having a second conductivity type different from said first conductivity type;

    a filling portion filling each of said plurality of first trenches covered with said gate layer;

    a second electrode separated from said gate layer and provided on said second surface of said silicon carbide substrate; and

    a gate electrode electrically insulated from said silicon carbide substrate and electrically connected to said gate layer,wherein said filling portion is made of one of a semiconductor and a conductor, and separated from said silicon carbide substrate by said gate layer, andwherein said gate electrode is in contact with said filling portion.

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