×

Semiconductor device having a floating semiconductor zone

  • US 8,872,264 B2
  • Filed: 06/13/2013
  • Issued: 10/28/2014
  • Est. Priority Date: 07/21/2009
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a first trench and a second trench extending into a semiconductor body from a surface;

    a body region of a first conductivity type adjoining a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining a source structure and being configured to be controlled in its conductivity by a gate structure, wherein the channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench; and

    an electrically floating semiconductor zone of the first conductivity type adjoining to the first trench and having a bottom side located deeper within the semiconductor body than a bottom side of the body region,wherein each of the first and second trench includes an insulating structure and an electrode structure.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×