Integrated structure for MEMS device and semiconductor device and method of fabricating the same

• US 8,872,287 B2
• Filed: 03/27/2008
• Issued: 10/28/2014
• Est. Priority Date: 03/27/2008
• Status: Active Grant

• Current Assignee: Marlin Semiconductor Limited (f/k/a Sandyford Semiconductor Limited) (Vector Capital Corporation)
• Original Assignee: United Microelectronics Corporation
• Inventors: Lan, Bang-Chiang, Ho, Li-Hsun, Wu, Wei-Cheng, Wu, Hui-Min, Chen, Min, Su, Tzung-I, Huang, Chien-Hsin
• Primary Examiner(s): HSIEH, HSIN YI
• Application Number:
  US12/056,286
• Publication Number:
  US 20090243004A1
• Time in Patent Office: 2,406 Days
• Field of Search: 257/415, 257/E29.324
• US Class Current: 257/415
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 1/00801 Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer B81C1/00595, B81C1/00468 take precedence
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: B81C 2203/0714 Forming the micromechanical structure with a CMOS process
• CPC Class Codes: B81C 2203/0742 Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
• CPC Class Codes: B81C 2203/0792 Forming interconnections between the electronic processing unit and the micromechanical structure
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout

Abstract

The present invention relates to an integrated structure for a MEMS device and a semiconductor device and a method of fabricating the same, in which an etch stopping element is included on a substrate between the MEMS device and the semiconductor device for protecting the semiconductor device from lateral damage when an oxide releasing process is performed to fabricate the MEMS device. The etch stopping element has various profiles and is selectively formed by an individual fabricating process or is simultaneously formed with the semiconductor device in the same fabricating process. It is a singular structure or a combined stacked multilayered structure, for example, a plurality of rows of pillared etch-resistant material plugs, one or a plurality of wall-shaped etch-resistant material plugs, or a multilayered structure of a stack of which and an etch-resistant material layer.

Claims

1. An integrated structure for a MEMS device and a semiconductor device, comprising:

a substrate;

a dielectric layer formed on the substrate;

a MEMS device formed in the substrate or in or partially in the dielectric layer and exposed to the environment;

a semiconductor device formed in or partially in the substrate or in or partially in the dielectric layer;

an etch stopping element formed on the substrate and in or partially in the dielectric layer between the MEMS device and the semiconductor device, surrounding the MEMS device on all sides of the MEMS device in a plane parallel to the substrate, and not covering the MEMS device, and further comprising an etch-resistant material layer stacked with etch-resistant material plugs, thereby to protect the semiconductor device from being etched during a release process for making the MEMS device;

an interconnect having a plurality of layers disposed within the dielectric layer and contacting the semiconductor device, wherein a top layer of the interconnect is on the dielectric layer; and

a passivation layer covering the top layer of the interconnect and not covering the MEMS device.

2. The integrated structure for a MEMS device and a semiconductor device of claim 1, wherein the etch stopping element comprises a plurality of etch-resistant material plugs arranged in a plurality of rows.

3. The integrated structure for a MEMS device and a semiconductor device of claim 2, wherein the etch-resistant material plugs comprises an HF-resistant material.

4. The integrated structure for a MEMS device and a semiconductor device of claim 2, wherein the etch-resistant material plugs of the two adjacent rows are arranged in stagger.

5. The integrated structure for a MEMS device and a semiconductor device of claim 1, wherein the etch-resistant material layer stacked with the etch-resistant material plugs together has a dual damascene structure.

6. The integrated structure for a MEMS device and a semiconductor device of claim 1, wherein the etch stopping element comprises at least a wall-shaped etch-resistant material plug.

7. The integrated structure for a MEMS device and a semiconductor device of claim 6, wherein the at least a wall-shaped etch-resistant material plug comprises an HF-resistant material.

8. The integrated structure for a MEMS device and a semiconductor device of claim 6, wherein the etch stopping element further comprises the etch resistant material layer stacked with the at least a wall-shaped etch-resistant material plug.

9. The integrated structure for a MEMS device and a semiconductor device of claim 8, wherein the etch-resistant material layer stacked with the at least a wall-shaped etch-resistant material plug together has a dual damascene structure.

10. The integrated structure for a MEMS device and a semiconductor device of claim 1, wherein the dielectric layer is a silicon oxide layer.

16. The integrated structure for a MEMS device and a semiconductor device of claim 1, wherein the MEMS device comprises a microphone component and an elastic layer covering the microphone component.

17. The integrated structure for a MEMS device and a semiconductor device of claim 16, wherein the elastic layer further covers the passivation layer.

11. An integrated structure for a MEMS device and a semiconductor device, comprising:

a substrate;

a dielectric layer formed on the substrate;

a MEMS device formed in the substrate or in or partially in the dielectric layer and exposed to the environment;

a semiconductor device formed in or partially in the substrate or in or partially in the dielectric layer; and

a metal layer or a polysilicon layer stacked with metal plugs or polysilicon plugs, formed on the substrate and in or partially in the dielectric layer between the MEMS device and the semiconductor device, surrounding the MEMS device on all sides of the MEMS device in a plane parallel to the substrate, and not covering the MEMS device, thereby to protect the semiconductor device from being etched during a release process for making the MEMS device;

an interconnect having a plurality of layers disposed within the dielectric layer and contacting the semiconductor device, wherein a top layer of the interconnect is on the dielectric layer; and

a passivation layer covering the top layer of the interconnect and not covering the MEMS device.

12. The integrated structure for a MEMS device and a semiconductor device of claim 11, wherein the metal plugs or polysilicon plugs comprise at least a wall-shaped plug.

13. The integrated structure for a MEMS device and a semiconductor device of claim 12, wherein the at least a wall-shaped plug comprises an HF-resistant material.

14. The integrated structure for a MEMS device and a semiconductor device of claim 11, wherein the metal layer or the polysilicon layer and the metal plugs or polysilicon plugs together has a dual damascene structure.

15. The integrated structure for a MEMS device and a semiconductor device of claim 11, wherein the dielectric layer is a silicon oxide layer.

18. The integrated structure for a MEMS device and a semiconductor device of claim 11, wherein the MEMS device comprises a microphone component and an elastic layer covering the microphone component.

19. The integrated structure for a MEMS device and a semiconductor device of claim 18, wherein the elastic layer further covers the passivation layer.